“PD” (Powerfull Optical Disk System) for Multimedia

Abstract

The use of CD-ROM has become widespread. PC users have generally been satisfied with the performance CD-ROM's, however, there is also a demand for larger-capacity removable rewritable media for “Multimedia” applications. The “PD” system offers users an optical disk which is easily handled such as floppy disks presently in use. In addition, “PD” can also read CD-ROM at fourtimes of the speed using a single common slot for both CD-ROM and PD media. The PD system (name of the new optical disk system prososed by Matsushita Electric Industrial. Co., Ltd.) has good compatibility for pit and groove recording. We calculated the reflectivity, tracking error, and ROM modulation, and varied the groove depth and width to maximize performance. A signal was written on various pregroove depths, and the reproduced signal ratio was measured. We obtained good results by using a phase-change material with the PD optical disk.

Electrical properties of Se2Sb2Te6thin films

“…The phase change between crystalline and amorphous state and vice versa (writing or erasing) can be produced by either short electrical pulse or short laser pulse that heats the material above the crystallization or melting temperature. Moreover, one of the latest and attractive applications of chalcogenide glass is the phase-change rewritable optical disk, which has a large capacity and is easily handled like the floppy disk presently used [13]. Some chalcogenide semiconductor films can be applied to electrical write and erase nonvolatile memory devices.…”

Synthesis and characterization of phase change memory cells

“…PCM is expected to become the main stream technology to replace the flash memory [3][4][5][6] . PCM offers high scalability, good stability, low process complexity, low cost, relatively high operation speed, and good compatibility with complementary metal--oxide-semiconductor (CMOS) process [7][8][9][10] . It makes use of the phasechange material which can be rapidly heated and quenched to either amorphous or crystalline phases that strongly differ in resistance.…”

Multiple phase-transition in Ge2Sb2Te5 based phase change memory cell by current–voltage measurement

“…[1][2][3], are becoming popular phase-change recording materials for phase-change random access memory (PCM) [4]. PCM makes use of the difference in resistivity of phase-change material.…”