Multiple phase-transition in Ge2Sb2Te5 based phase change memory cell by current–voltage measurement

Wu, Liangcai; Zhang, Song; Liu, Bo; Zhang, Ting; Rao, Feng; Shen, Jie; Wang, Feng; Feng, Songlin

doi:10.1016/j.jnoncrysol.2007.06.039

Cited by 15 publications

(6 citation statements)

References 11 publications

(9 reference statements)

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“…[1][2][3][4] PCM utilizes the fast and reversible switching between amorphous and crystalline phases of chalcogenide phase-change materials, Ge 2 Sb 2 Te 5 (GST) being the most common. [5,6] Modeling of PCM devices is very important to understand the device behavior and design accordingly for improved performance. However, the granularity of phasechange materials, [7][8][9] dynamic change of material properties with temperature, electric field, and phase, [10][11][12][13][14][15] latent heat of fusion and crystallization, [16][17][18][19] and complex interplay between electronic and thermal transport at nanoscales make modeling more complicated compared to conventional semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

Modeling Reset, Set, and Read Operations in Nanoscale Ge₂Sb₂Te₅ Phase‐Change Memory Devices Using Electric Field‐ and Temperature‐Dependent Material Properties

Kashem

Scoggin

Woods

et al. 2023

Physica Rapid Research Ltrs

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Herein, a finite element simulation framework for phase‐change memory devices that simultaneously solves for current continuity, electrothermal heating, and crystallization–amorphization dynamics using electrothermal models and dynamic material parameters that are functions of electric field and temperature is described. In this latest model, an electric field‐ and temperature‐dependent electrical conductivity model of stable amorphous Ge2Sb2Te5 (GST) obtained from experiments performed on GST line cells to study Read, Reset, and Set operations of mushroom cells is incorporated. The effects of current polarity, heater height, Reset pulse rise and fall times, access device configuration, and ambient temperature are analyzed. The simulation results predict a 2x change in Reset current requirements with different current polarity due to thermoelectric effects. Heater height plays a significant role in thermal losses; ≈16% decrease in Reset current for 4x increase in the heater height is obtained. Increase in the ambient temperature results in a linear decrease in the Reset power required to achieve the same Reset/Set resistance contrast.

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Section: Introductionmentioning

confidence: 99%

Modeling Reset, Set, and Read Operations in Nanoscale Ge₂Sb₂Te₅ Phase‐Change Memory Devices Using Electric Field‐ and Temperature‐Dependent Material Properties

Kashem

Scoggin

Woods

et al. 2023

Physica Rapid Research Ltrs

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“…The inhibition of crystalline growth reduces reamorphization current and improves the endurance of PRAM devices [12,20]. The efficacy of the Ge 2 Sb 2 Te 5 based PCM cell, and multiple phase-transition phenomena, were evidenced by the current-voltage (I-V) measurements during current sweeping mode [21].…”

Section: Introductionmentioning

confidence: 99%

The Electrical and Structural Properties of Nitrogen Ge1Sb2Te4 Thin Film

Osiac

2018

Coatings

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The present work describes the process of obtaining thin films of Ge 1 Sb 2 Te 4 by means of the short-pulse High Power Impulse Magnetron Sputtering (HiPIMS) technique. The Ge 1 Sb 2 Te 4 (GST-124) and nitrogen Ge 1 Sb 2 Te 4 (nitrogen GST-124) films were obtained in HiPIMS plasma ignited in Ar/GST-124 and Ar/N 2 /GST-124, respectively. In particular, the possibility of tailoring the electrical properties of films for applications in the phase change memory (PCM) cells was investigated. The I-V measurements performed in a voltage sweeping mode on GST-124 and nitrogen GST-124 show that the threshold switching voltage varies as a function of nitrogen level in HiPIMS plasma. Amorphous-to-crystalline trigonal phase transition of the films was induced by thermal annealing, and structural changes were identified using X-ray diffraction and Raman scattering spectroscopy. The most intense bands appeared for the annealed layers in the range of 138-165 cm −1 , for GST-124, and 138-150 cm −1 for nitrogen respectively.

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“…In this paper, we report the Ge 2 Sb 2 Te 5 based PCM cells which were fabricated by a standard 0.18 μm CMOS process [11] . Then transmission electron microscope (TEM), high resolution transmission electron microscope (HREM) and element mapping technique were used to characterize the cross-sectional structure of the sample.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of phase change memory cells

Wang

Han

Zhang

et al. 2009

Sci. China Ser. E-Technol. Sci.

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Phase change memory (PCM) cells based on Ge 2 Sb 2 Te 5 were synthesized and investigated. Currentvoltage measurements demonstrated different final resistances. Transmission electron microscopy (TEM), high resolution electron microscopy (HREM) and the energy dispersive X-ray spectroscopy (EDS) analyses were used to characterize the microstructures of the PCM cells. The architectures, structures and defects in the cells including the deposited elemental distributions and the interfacial structures between electrodes and barrier layers were studied in detail.electron microscopy, microstructure, multilayer structure

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Multiple phase-transition in Ge2Sb2Te5 based phase change memory cell by current–voltage measurement

Cited by 15 publications

References 11 publications

Modeling Reset, Set, and Read Operations in Nanoscale Ge₂Sb₂Te₅ Phase‐Change Memory Devices Using Electric Field‐ and Temperature‐Dependent Material Properties

Modeling Reset, Set, and Read Operations in Nanoscale Ge₂Sb₂Te₅ Phase‐Change Memory Devices Using Electric Field‐ and Temperature‐Dependent Material Properties

The Electrical and Structural Properties of Nitrogen Ge1Sb2Te4 Thin Film

Synthesis and characterization of phase change memory cells

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Multiple phase-transition in Ge2Sb2Te5 based phase change memory cell by current–voltage measurement

Cited by 15 publications

References 11 publications

Modeling Reset, Set, and Read Operations in Nanoscale Ge2Sb2Te5 Phase‐Change Memory Devices Using Electric Field‐ and Temperature‐Dependent Material Properties

Modeling Reset, Set, and Read Operations in Nanoscale Ge2Sb2Te5 Phase‐Change Memory Devices Using Electric Field‐ and Temperature‐Dependent Material Properties

The Electrical and Structural Properties of Nitrogen Ge1Sb2Te4 Thin Film

Synthesis and characterization of phase change memory cells

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Product

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Modeling Reset, Set, and Read Operations in Nanoscale Ge₂Sb₂Te₅ Phase‐Change Memory Devices Using Electric Field‐ and Temperature‐Dependent Material Properties

Modeling Reset, Set, and Read Operations in Nanoscale Ge₂Sb₂Te₅ Phase‐Change Memory Devices Using Electric Field‐ and Temperature‐Dependent Material Properties