PbZr
                  0.5
                Ti
                  0.5
                O
                  3
                /La
                  0.5
                Sr
                  0.5
                CoO
                  3
           heterostructures prepared by chemical solution routes on silicon with no fatigue polarization

Wang, G. S.; Meng, Xiangjian; Sun, Jiamin; Lai, Zhenquan; Yu, Jie; Guo, Shishang; Cheng, Jinrong; Tang, Jun; Chu, Jun

doi:10.1063/1.1419234

Cited by 50 publications

(20 citation statements)

References 18 publications

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“…Thereby, the band gaps of thin films were identified to be about 3.57, 3.60, 3.61, 3.63, and 3.69 eV for x00.25, 0.40, 0.55, 0.70 and 0.85, respectively. These values are larger than 2.80 eV of BiT thin films [19,22], 3.25 eV for BLT thin films [23], and nearly the same to the reported value of 3.61 eV for BNT thin films [24]. Also from the inset we can see that the optical band gaps of BEuT thin films are very obviously composition dependent.…”

Section: Resultssupporting

confidence: 87%

Optical characteristics of Bi4-xEuxTi3O12 ferroelectric thin films on fused silica substrates

Ruan

Zhou

et al. 2012

J Electroceram

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Bi 4-x Eu x Ti 3 O 12 (BEuT) ferroelectric thin films were prepared on fused silica substrates by using chemical solution deposition technique. The attained samples had a polycrystalline bismuth-layered perovskite structure, and their optical properties were composition dependent. The thin film samples had good optical transmittance above 500 nm wavelength. A blue shift of the optical absorption edge was observed in the BEuT thin films with increasing Eu 3+ concentration. The optical band gaps of BEuT thin films were estimated to be about 3.57, 3.60, 3.61, 3.63, and 3.69 eV for the samples with x00.25, 0.40, 0.55, 0.70, and 0.85, respectively. Photoluminescence measurements showed that two emission peaks of BEuT thin films originated from two transitions of 5 D 0 → 7 F 1 (594 nm) and 5 D 0 → 7 F 2 (617 nm) had maximum intensities when Eu 3+ concentration was x00.40. The relatively high quenching concentration of Eu 3+ content was thought to be related to the layered structure of BEuT thin films. These results suggested that multifunctional BEuT thin film materials could have promising applications in optoelectronic devices.

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Section: Resultssupporting

confidence: 87%

Optical characteristics of Bi4-xEuxTi3O12 ferroelectric thin films on fused silica substrates

Ruan

Zhou

et al. 2012

J Electroceram

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“…Lanthanum cobaltate has been synthesized in the form of single crystals [48] and thin films by metal-organic chemical liquid [29] and chemical vapor deposition [49] techniques. For the preparation of bulk lanthanum cobaltate ceramics, different methods, such as solid state [50][51][52], co-precipitation [53,54], spray-pyrolysis [55], microemulsion [56], combustion [19,57,58] and reactive grinding [59] techniques could be used.…”

Section: Introductionmentioning

confidence: 99%

“…The amount of charge carriers and thus the electrical conductivity and thermoelectric properties in this system can be tuned by suitable Cosite and La-site substitution [13][14][15][16][17][18][19][20][21][22]. There has been substantial recent interest in strontium-doped rare earth perovskites (Ln 1-x Sr x CoO 3-δ ) as cathode materials for solid oxide fuels cells [19,[23][24][25][26][27][28], as an ideal substrate for the deposition of lead zirconium titanate (PZT) films [29], and as high temperature ceramic membranes [30][31][32]. These phases also display novel magnetic behaviour, including glassiness and room temperature ferromagnetism [33][34][35][36][37][38][39][40][41][42].…”

Section: Introductionmentioning

confidence: 99%

Sol-gel preparation and characterization of non-substituted and Sr-substituted lanthanum cobaltates

Cizauskaite

Kareiva

2008

Open Chemistry

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This paper reports on the results concerning the sol-gel preparation and characterization of Sr-substituted perovskite lanthanum cobaltates La 1-x Sr x CoO 3-d (x = 0.0, 0.25, 0.5 and 0.75). The metal ions, generated by dissolving starting materials in diluted acetic acid were complexed by 1,2-ethanediol to obtain the precursors for the non-substituted and Sr-substituted LaCoO 3 . The influence of the synthesis temperature, heating time and the amount of substituent on the phase purity of La 1-x Sr x CoO 3-d were investigated. The phase transformations, composition and micro-structural features in the gels and polycrystalline samples were studied by thermal analysis (TG/DTA), infrared spectroscopy (IR), powder X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM). © Versita Warsaw and Springer-Verlag Berlin Heidelberg.

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“…Nowadays the fabrication of artificial ferroelectric multilayers [1] down to a small thickness per layer and a small-dimension heterostructure is possible [2,3]. These structures are of interest because of potential device applications as pyroelectric detectors, memory systems or electro-optic modulators.…”

Section: Introductionmentioning

confidence: 99%

Influence of interface between two ferroelectrics in a film on polarization distribution

Lü

Zheng²,

Sun

2003

Physica Status Solidi (b)

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Using Ginzburg and Devonshire theory the polarization distribution is studied for a ferroelectric film consisting of two different materials with an interface parallel to the spontaneous polarization. The numerical results show that a much thinner transition layer between two materials can influence the polarization in a larger range. The temperature and the Curie-temperature difference between two bulk materials are two sensitive influencing factors and the change of the thickness of the transition layer has little influence. The rise of temperature or Curie-temperature difference between two bulk materials will widen the distribution range of inhomogeneous polarization.

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PbZr 0.5 Ti 0.5 O 3 /La 0.5 Sr 0.5 CoO 3 heterostructures prepared by chemical solution routes on silicon with no fatigue polarization

Cited by 50 publications

References 18 publications

Optical characteristics of Bi4-xEuxTi3O12 ferroelectric thin films on fused silica substrates

Optical characteristics of Bi4-xEuxTi3O12 ferroelectric thin films on fused silica substrates

Sol-gel preparation and characterization of non-substituted and Sr-substituted lanthanum cobaltates

Influence of interface between two ferroelectrics in a film on polarization distribution

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