Optical characteristics of Bi4-xEuxTi3O12 ferroelectric thin films on fused silica substrates

Abstract

Bi 4-x Eu x Ti 3 O 12 (BEuT) ferroelectric thin films were prepared on fused silica substrates by using chemical solution deposition technique. The attained samples had a polycrystalline bismuth-layered perovskite structure, and their optical properties were composition dependent. The thin film samples had good optical transmittance above 500 nm wavelength. A blue shift of the optical absorption edge was observed in the BEuT thin films with increasing Eu 3+ concentration. The optical band gaps of BEuT thin films were estimated to be about 3.57, 3.60, 3.61, 3.63, and 3.69 eV for the samples with x00.25, 0.40, 0.55, 0.70, and 0.85, respectively. Photoluminescence measurements showed that two emission peaks of BEuT thin films originated from two transitions of 5 D 0 → 7 F 1 (594 nm) and 5 D 0 → 7 F 2 (617 nm) had maximum intensities when Eu 3+ concentration was x00.40. The relatively high quenching concentration of Eu 3+ content was thought to be related to the layered structure of BEuT thin films. These results suggested that multifunctional BEuT thin film materials could have promising applications in optoelectronic devices.

Temperature dependence of broadband near-infrared luminescence from Ni2+-doped Ba0.5Sr0.5TiO3

“…On the other hand, perovskite oxides are an important class of dielectric materials, which have widely been used in microwave devices, smart sensors, and piezoelectric transducers. [8][9][10] Particularly, active ions doped barium strontium titanate has drawn great attention for its simultaneous ferroelectric and optical properties, 11,12 suggesting attractive applications in multifunctional optoelectronic devices. 3,13 Recently, our research group reported tunable and ultrabroadband NIR luminescence from Ni 2þ -doped ferroelectric perovskites.…”