1988
DOI: 10.1109/3.7103
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PbTe/Pb/sub 1-x/Sn/sub x/Te (x<or=0.18) multiquantum wells: magnetooptics, four-wave mixing, and band structure

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Cited by 90 publications
(35 citation statements)
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“…A careful analysis of the tight-binding parameters available in the literature 29,30 shows that although they recover correctly the band structure, they do not lead to effective masses, which are determined experimentally. Thus, in order to fit our tight-binding model to all existing experimental results, we have performed a new tightbinding parametrization for the PbTe crystal.…”
Section: A Pbtementioning
confidence: 99%
See 1 more Smart Citation
“…A careful analysis of the tight-binding parameters available in the literature 29,30 shows that although they recover correctly the band structure, they do not lead to effective masses, which are determined experimentally. Thus, in order to fit our tight-binding model to all existing experimental results, we have performed a new tightbinding parametrization for the PbTe crystal.…”
Section: A Pbtementioning
confidence: 99%
“…In the empirical tight-binding Hamiltonian, the matrix elements between orbitals centered on different sites are treated as parameters, which are adjusted to any known, often experimental values. The band structures of the IV-VI semiconductor compounds obtained by tight-binding method 29,30 are widely used to explain the observed phenomena in these materials. To describe the band structure of the PbTe-CdTe and PbTe-MnTe solid solutions we need the tight-binding parametrization for all the constituent compounds, i.e., PbTe, CdTe and MnTe.…”
Section: Band Structure Of the Constituent Materials And Their Amentioning
confidence: 99%
“…In the case of PbTe/Pb 1 -x Sn x Te layers grown on (111) BaF2 substrates, the [111] valley oriented parallel to the growth direction is shifted downward in energy with respect to the remaining three oblique (111) valleys [21,24] (see Fig. 4).…”
Section: Band Offsets and The Types Of Iv-vi Slmentioning
confidence: 99%
“…The authors of Refs. [21][22][23][24][25][26] argued that PbTe/Pb1-x Snx Te (x ≤ 0.2) SL are of type I (with the wells in narrower gap Pb1-x Sn x Te layers) basing themselves on different experimental results including: (a) magnetooptical experiments [55], giving the g-values of electrons in the wells equal to those in Pb1-x Snx Τe films; (b) coherent Raman scattering [24]; (c) photoluminescence experiments [25,26].…”
Section: Band Offsets and The Types Of Iv-vi Slmentioning
confidence: 99%
“…A large amount of work has been done on III-V-QW lasers [1]. Semiconductor quantum well stuctures and superlattices on the base of lead chalcogenides have also been investigated experimentally and theoretically [2].…”
Section: Introductionmentioning
confidence: 99%