PbSe photodetector arrays for IR sensors

Investigation on structural, optical, morphological and electrical properties of thermally deposited lead selenide (PbSe) nanocrystalline thin films

“…Now-a-days, lead chalcogenide nanocrystalline semiconducting materials have attracted the attention of many researchers because of their potential applications in solar energy conversion devices [1,2], photosensors (or) photodetectors [3,4], thermoelectric devices [5,6] and nonlinear optical devices. PbSe belongs to IV-VI compound semiconductor, possessing excellent optoelectronic properties and it exhibits cubic structure with face centered phase.…”

Morphology‐Tailored Synthesis of PbSe Nanocrystals and Thin Films from Bis[N,N‐diisobutyl‐N′‐(4‐nitrobenzoyl)selenoureato]lead(II)

“…[2] Lead selenide particles or thin films with critical dimensions best measured in nanometres have potential for application in optical switches, [2][3][4] communication devices, [5][6][7][8][9] photovoltaic cells, [10][11][12][13][14][15][16][17][18][19][20][21][22] biological imaging [23][24][25][26][27][28] and photodetectors. [29][30][31][32][33][34][35][36] Murray et al first synthesized monodispersed PbSe quantum dots, [37] but a number of other strategies have now been developed. [38][39][40][41][42][43][44][45][46][47][48][49]…”

Size-dependent spectroscopic, optical, and electrical properties of PbSe nanoparticles

“…PbSe is known to be a narrow band gap semiconductor (Eg = 0.27 V at 300 K [16]). It is widely used for manufacturing of photodetectors, photoresistors, and IR photometers (3-5.5 µm) [17][18][19][20]. PbSe microcrystallites have been used to induce the second-harmonic generation of the IR in the range of (5-15 µm) [21].…”