Pb phase coarsening in eutectic Pb/Sn flip chip solder joints under electric current stressing

Hua, Yi; Basaran, Cemal; Hopkins, Douglas C.

doi:10.1016/j.ijsolstr.2003.12.001

Cited by 40 publications

(21 citation statements)

References 31 publications

(29 reference statements)

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“…Relevant studies indicate that electromigration can induce significant microstructural changes in solder alloys, including void nucleation and propagation, hillock formation, and phase segregation. [1][2][3][4][5][6][7][8][9][10][11][12] Eutectic SnPb alloy is the most common solder material in microelectronic packaging. Brandenburg et al 3 and Rinne 7 found that electromigration could force the Pb atoms to migrate along the electron flow and accumulate at the anode side.…”

Section: Introductionmentioning

confidence: 99%

Electromigration-Induced Bi Segregation in Eutectic SnBi Solder Joint

Chen

Lin

2007

Journal of Elec Materi

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Section: Introductionmentioning

confidence: 99%

Electromigration-Induced Bi Segregation in Eutectic SnBi Solder Joint

Chen

Lin

2007

Journal of Elec Materi

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“…Lead-free solder alloy, including SAC, has been shown to follow Hall-Petch relation (Siviour et al, 2005). For SnPb solder, nanoindetation results from Ye et al (2004) show that the mechanical properties are in agreement with the Hall-Petch relation. They observed Pb-grain coarsening after thermomechanical loading, and found that solder alloy properties degrade from substrate (cold) to chip (hot) side.…”

Section: Discussionmentioning

confidence: 73%

Thermomigration in lead-free solder joints

Abdulhamid

Basaran

2008

IJMSI

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Abstract:In the next generation nanoelectronics and SiC based electronic packaging, current density and temperature gradient will be larger in orders of magnitude. Electromigration and thermomigration are considered to be major road blocks leading to realisation of nanoelectronics and SiC based high temperature power electronics. In this paper, damage mechanics of 95.5Sn4Ag0.5Cu (SAC405) lead-free solder joints under high temperature gradients have been studied. This paper presents observations on samples which were subjected to 1000°C/cm thermal gradient for two hours, 286 hours, 712 hours and 1156 hours. It was observed that samples subjected to thermal gradient did not develop a Cu 3 Sn intermetallic compound (IMC) layer at the hot side due to Cu migration to the cold side thus causing insufficient Cu mass concentration to form Cu 3 Sn. On the other hand, in samples subjected to isothermal annealing exhibited IMC growth. In samples subjected to thermomigration, near the cold side the Cu concentration is significantly higher, compared to hot side. Extensive surface hardness testing showed increase in hardness from the hot to cold sides, which indicates vacancy migration and Sn grain coarsening are in the opposing direction.

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“…13 However, the mechanism was still unknown. In addition to the grain coarsening, the current stressing had another significant effect on the microstructural evolution of the SnBi solder.…”

Section: Effects Of Cu Doping Under Current Stressingmentioning

confidence: 99%

“…3 Relevant studies indicate that electromigration can induce significant microstructural changes and different intermetallic growth in the solder joint systems. [4][5][6][7][8][9][10][11][12][13] The microstructural changes include void nucleation and propagation, hillock formation, and phase segregation. In the eutectic SnPb solder, it was found that electromigration could force Pb atoms to migrate along the direction of electron flow and accumulate at the anode side.…”

Section: Introductionmentioning

confidence: 99%

Effects of Copper Doping on Microstructural Evolution in Eutectic SnBi Solder Stripes under Annealing and Current Stressing

Chen

Huang

Liao

et al. 2007

Journal of Elec Materi

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Effects of Cu doping on the microstructural evolution in the eutectic SnBi solder stripes under annealing and current stressing were investigated. Coarsening of the Bi grains was observed in the eutectic SnBi solder upon annealing at 85°C. Doping of 1 wt.% Cu could significantly reduce the grain coarsening rate from 2.8 to 0.5 lm 3 /h. In addition to grain coarsening, mass accumulation of Bi at the anode and solder depletion at the cathode of the eutectic SnBi solder stripe stressed by a current of 1.3 · 10 4 A/cm 2 at 85°C were also observed. Doping of 1 wt.% Cu could also reduce the grain coarsening of the solder under current stressing; however, it resulted in an enhancement of the electromigration effect. Accumulation of Bi at the anode and the solder depletion at the cathode became more severe in the Cu-doped solder stripe.

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Pb phase coarsening in eutectic Pb/Sn flip chip solder joints under electric current stressing

Cited by 40 publications

References 31 publications

Electromigration-Induced Bi Segregation in Eutectic SnBi Solder Joint

Electromigration-Induced Bi Segregation in Eutectic SnBi Solder Joint

Thermomigration in lead-free solder joints

Effects of Copper Doping on Microstructural Evolution in Eutectic SnBi Solder Stripes under Annealing and Current Stressing

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