Pauli blockade of the electron spin flip in bulk GaAs

Amo, A.; Viña, L.; Lugli, Paolo; Tejedor, C.; Toropov, A. I.; Журавлев, К. С.

doi:10.1103/physrevb.75.085202

Cited by 13 publications

(13 citation statements)

References 43 publications

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“…The spin-flip is only allowed around the chemical potential, which suppresses the Bir-Aronov-Pikus spin relaxation at low temperature. Amo et al found similar arguments and results [392].…”

Section: Bir-aronov-pikus Mechanismsupporting

confidence: 67%

“…Hence, the relevant spin relaxation mechanisms are the Bir-Aronov-Pikus and the D'yakonov-Perel' mechanisms. There has been a debate about the relative importance of these two mechanisms in intrinsic III-V and II-VI semiconductors [21,390,392,[584][585][586]. Single-particle theory based on the elastic scattering approximation comes to the conclusion that spin relaxation due to the Bir-Aronov-Pikus mechanism can be more important at low temperature and high hole density [390].…”

Section: Electron Spin Relaxation In Intrinsic Bulk Iii-v and Ii-vi Smentioning

confidence: 98%

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Spin dynamics in semiconductors

2010

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This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.Comment: a review article with 193 pages and 1103 references. To be published in Physics Reports

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“…The spin-flip is only allowed around the chemical potential, which suppresses the Bir-Aronov-Pikus spin relaxation at low temperature. Amo et al found similar arguments and results [392].…”

Section: Bir-aronov-pikus Mechanismsupporting

confidence: 67%

Section: Electron Spin Relaxation In Intrinsic Bulk Iii-v and Ii-vi Smentioning

confidence: 98%

Spin dynamics in semiconductors

2010

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“…This is comparable to values given in previous works published on undoped GaN [2,3]. If we analyze in detail the extracted time constants: with regard to the electrons, a time of 15 ps is, at least, an order of magnitude lower than what is measured, for example, on GaAs [7][8][9][10][11][12]. Concerning the holes, the relaxation of their pseudo-spin in semiconductors is influenced by the admixture of the valence subbands.…”

Section: Contributed Articlesupporting

confidence: 82%

Excitonic spin relaxation in GaN

Brimont¹,

Gallart

Crégut

et al. 2008

Phys. Status Solidi (c)

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By performing non-degenerate pump-probe experiments, we study the relaxation dynamics of spin-polarized A and B excitons in wurtzite epitaxial GaN. By analyzing the differential reflection of the two circularly polarized probe components, we extract characteristic times of the different spin relaxation processes. We show that the spin relaxation of the exciton as a whole is negligible in regard to the spin relaxation of the individual carriers. We determined T-e = 15 ps for the electron in the conduction band, T-hh = 5 ps, and T-lh = 1.5 ps for the heavy hole and for the light hole, respectively. The quite long HH relaxation time can be related to the band structure in which the degeneracy between different spin valence bands is lifted

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“…28 In bulk system, similar problem also exists. 67 However, the KSBE approach keeps all the electron-hole exchange scattering terms, and thus gives correct results.…”

Section: Ksbesmentioning

confidence: 99%

Electron-spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach

2009

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Electron spin relaxation in bulk III-V semiconductors is investigated from a fully microscopic kinetic spin Bloch equation approach where all relevant scatterings, such as, the electron-nonmagneticimpurity, electron-phonon, electron-electron, electron-hole, and electron-hole exchange (the Bir-Aronov-Pikus mechanism) scatterings are explicitly included. The Elliot-Yafet mechanism is also fully incorporated. This approach offers a way toward thorough understanding of electron spin relaxation both near and far away from the equilibrium in the metallic regime. The dependences of the spin relaxation time on electron density, temperature, initial spin polarization, photo-excitation density, and hole density are studied thoroughly with the underlying physics analyzed. We find that these dependences are usually qualitatively different in the non-degenerate and degenerate regimes. In contrast to the previous investigations in the literature, we find that: (i) In n-type materials, the Elliot-Yafet mechanism is less important than the D'yakonov-Perel' mechanism, even for the narrow band-gap semiconductors such as InSb and InAs. (ii) The density dependence of the spin relaxation time is nonmonotonic and we predict a peak in the metallic regime in both n-type and intrinsic materials. (iii) In intrinsic materials, the Bir-Aronov-Pikus mechanism is found to be negligible compared with the D'yakonov-Perel' mechanism. We also predict a peak in the temperature dependence of spin relaxation time which is due to the nonmonotonic temperature dependence of the electron-electron Coulomb scattering in intrinsic materials with small initial spin polarization. (iv) In p-type III-V semiconductors, the Bir-Aronov-Pikus mechanism dominates spin relaxation in the low temperature regime only when the photo-excitation density is low. When the photo-excitation density is high, the Bir-Aronov-Pikus mechanism can be comparable with the D'yakonov-Perel' mechanism only in the moderate temperature regime roughly around the Fermi temperature of electrons, whereas for higher or lower temperature it is unimportant. The relative importance of the Bir-Aronov-Pikus mechanism decreases with the photo-excitation density and eventually becomes negligible at sufficiently high photo-excitation density. The effect of electric field on spin relaxation in n-type III-V semiconductors is also studied with behaviors very different from those in the twodimensional case reported. Finally, we find good agreement of our calculation with the experimental results.

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Pauli blockade of the electron spin flip in bulk GaAs

Cited by 13 publications

References 43 publications

Spin dynamics in semiconductors

Spin dynamics in semiconductors

Excitonic spin relaxation in GaN

Electron-spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach

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