We report exciton-polariton condensation in a new family of fully hybrid ZnO-based microcavity demonstrating the best-quality ZnO material available (a bulk substrate), a large quality factor (~4000) and large Rabi splittings (~240 meV). Condensation is achieved between 4 and 300 K and for excitonic fractions ranging between 17% and 96%, which corresponds to a tuning of the exciton-polariton mass, lifetime, and interaction constant by 1 order of magnitude. We demonstrate mode switching between polariton branches allowing, just by controlling the pumping power, to tune the photonic fraction by a factor of 4.

International audienceWe demonstrate polariton lasing in a bulk ZnO planar microcavity under non-resonant optical pumping at a small negative detuning (delta~-1/6 the 130 meV vacuum Rabi splitting) and a temperature of 120 K. The strong coupling regime is maintained at lasing threshold since the coherent nonlinear emission from the lower polariton branch (LPB) occurs at zero in-plane wavevector well below the uncoupled cavity mode. The contribution of multiple localized polariton modes above threshold and the non-thermal polariton statistics show that the system is in a far-from-equilibrium regime, likely related to the moderate photon lifetime and in-plane photonic disorder in the cavity

We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially- and time-resolved photoluminescence spectroscopy. The transport in these strongly disordered quantum wells is activated by dipole-dipole repulsion. The latter induces an emission blue shift that increases linearly with exciton density, whereas the radiative recombination rate increases exponentially. Under continuous, localized excitation, we measure a continuous red shift of the emission, as excitons propagate away from the excitation spot. This shift corresponds to a steady-state gradient of exciton density, measured over several tens of micrometers. Time-resolved micro-photoluminescence experiments provide information on the dynamics of recombination and transport of dipolar excitons. We account for the ensemble of experimental results by solving the nonlinear drift-diffusion equation. Quantitative analysis suggests that in such structures, exciton propagation on the scale of 10 to 20 microns is mainly driven by diffusion, rather than by drift, due to the strong disorder and the presence of nonradiative defects. Secondary exciton creation, most probably by the intense higher-energy luminescence, guided along the sample plane, is shown to contribute to the exciton emission pattern on the scale up to 100 microns. The exciton propagation length is strongly temperature dependent, the emission being quenched beyond a critical distance governed by nonradiative recombination.Comment: 11 pages, 8 figure

We compare the quality factor values of the whispering gallery modes of microdisks (μ-disks) incorporating GaN quantum dots (QDs) grown on AlN and AlGaN barriers by performing room temperature photoluminescence (PL) spectroscopy. The PL measurements show a large number of high Q factor resonant modes on the whole spectrum, which allows us to identify the different radial mode families and to compare them with simulations. We report a considerable improvement of the Q factor, which reflects the etching quality and the relatively low cavity loss by inserting QDs into the cavity. GaN/AlN QDs-based μ-disks show very high Q values (Q>7000) whereas the Q factor is only up to 2000 in μ-disks embedding QDs grown on the AlGaN barrier layer. We attribute this difference to the lower absorption below bandgap for AlN barrier layers at the energies of our experimental investigation.

International audiencePolariton relaxation mechanisms are analyzed experimentally and theoretically in a ZnO-based polariton laser. A minimum lasing threshold is obtained when the energy difference between the exciton reservoir and the bottom of the lower polariton branch is resonant with the LO phonon energy. Tuning off this resonance increases the threshold, and exciton-exciton scattering processes become involved in the polariton relaxation. These observations are qualitatively reproduced by simulations based on the numerical solution of the semiclassical Boltzmann equations

We review the recent developments of the polariton physics in microcavities featuring the exciton-photon strong coupling at room-temperature, and leading to the achievement of room-temperature polariton condensates. Such cavities embed active layers with robust excitons that present a large binding energy and a large oscillator strength, i.e. wide bandgap inorganic or organic semiconductors, or organic molecules. These various systems are compared, in terms of figures of merit and of common features related to their strong oscillator strength. The various demonstrations of polariton laser are compared, as well as their condensation phase diagrams. The room-temperature operation indeed allows a detailed investigation of the thermodynamic and out-of-equilibrium regimes of the condensation process. The crucial role of the spatial dynamics of the condensate formation is discussed, as well as the debated issue of the mechanism of stimulated relaxation from the reservoir to the condensate under non-resonant excitation. Finally the prospects of polariton devices are presented.Comment: 22 pages, 3 figures, 1 tabl

Deep ultra-violet semiconductor lasers have numerous applications for optical storage and biochemistry. Many strategies based on nitride heterostructures and adapted substrates have been investigated to develop efficient active layers in this spectral range, starting with AlGaN quantum wells on AlN substrates and more recently sapphire and SiC substrates. Here we report an efficient and simple solution relying on binary GaN/AlN quantum wells grown on a thin AlN buffer layer on a silicon substrate. This active region is embedded in microdisk photonic resonators of high quality factors and allows the demonstration of a deep ultra-violet microlaser operating at 275 nm at room temperature under optical pumping, with a spontaneous emission coupling factor β = (4 ± 2) 10−4. The ability of the active layer to be released from the silicon substrate and to be grown on silicon-on-insulator substrates opens the way to future developments of nitride nanophotonic platforms on silicon.

International audienceA ZnO planar optical microcavity displaying room-temperature polariton lasing has been fabricated. The cavity combines optimum crystalline quality, as given by the ZnO bulk single-crystal substrate employed as active region, and optimum photonic quality, as obtained by the use of two dielectric SiO2/HfO2 Bragg mirrors. A maximum cavity quality factor of about 3000 has been measured, enabling the observation of room-temperature polariton lasing in a wide range of cavity-exciton detuning conditions. Typically, the polariton lasing transition is accompanied by an increase of the output intensity by more than two orders of magnitude, a reduction of the emission linewidth by a factor 5 and a relatively small blueshift of the lower polariton branch (less than 5% of the Rabi splitting)