Patterning organic single-crystal transistor arrays

Briseño, Alejandro L.; Mannsfeld, Stefan C. B.; Ling, Mang Mang; Liu, Shuhong; Tseng, Ricky J.; Reese, Colin; Roberts, Mark; Yang, Yang; Wudl, Fred; Bao, Zhenan

doi:10.1038/nature05427

Cited by 983 publications

(776 citation statements)

References 27 publications

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“…This patterning approach provides greater versatility over the control of the lasing mode and its wavelength through judicious design of the perovskite cavity. Our work suggest a viable, scalable lithography approach to fabricating high‐quality periodic light emitting arrays for potential applications as integrated coherent light sources and other large‐area optoelectronic applications 34, 35, 36…”

Section: Introductionmentioning

confidence: 97%

Periodic Organic–Inorganic Halide Perovskite Microplatelet Arrays on Silicon Substrates for Room‐Temperature Lasing

et al. 2016

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Organic–inorganic metal halide perovskites have recently demonstrated outstanding efficiencies in photovoltaics as well as highly promising performances for a wide range of optoelectronic applications such as lasing, light emission, optical detectors, and even for radiation detection. Key to the realization of functional perovskite micro/nanosystems on the ubiquitous silicon optoelectronics platform is through sophisticated lithography. Despite the rapid progress made in halide perovskite lasing, direct lithographic patterning of perovskite films to form optical cavities on conventional substrates remains extremely challenging. This study realizes room‐temperature high‐quality factor whispering‐gallery‐mode lasing (Q ≈ 1210) from patterned lead halide perovskite microplatelets fabricated in periodic arrays on silicon substrate with micropatterned BN film as the buffer layer. By varying the size of the platelets, modal selectivity for single mode lasing can be achieved with different cavity sizes or by simply breaking the structural symmetry of the cavity through designing the pattern. Importantly, this work demonstrates a straightforward, versatile bottom‐up scalable strategy to realize high‐quality periodic perovskite arrays with variable cavity sizes for large‐area light‐emitting and optical gain applications.

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Section: Introductionmentioning

confidence: 97%

Periodic Organic–Inorganic Halide Perovskite Microplatelet Arrays on Silicon Substrates for Room‐Temperature Lasing

et al. 2016

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“…8 As a result, the growth of high-density arrays of organic single crystals is a desirable semiconductor film topology to achieve arrays of highperformance organic TFTs that can be exploited in large-area flexible circuits such as display backplanes. [9][10][11][12] Among different film deposition techniques, evaporation provides high material purity along with controlled thickness and uniformity over large areas. 3 The vapor phase growth of single organic crystals is traditionally performed by physical vapor transport (PVT) in process conditions close to thermodynamics equilibrium.…”

Section: Introductionmentioning

confidence: 99%

“…13 The growth of arrays of single pentacene crystals by PVT has been previously achieved using substrates with patterned self-assembled monolayers (SAM). 9 The nucleation of pentacene molecules was localized to the rough SAM films and resulted in growth of single crystals on areas of 5 µm x 5 µm. The main disadvantages of this method, however, are the high substrate temperature (≈ 240°C for pentacene), very limited control over film thickness, long processing times and difficult up scaling of the PVT technology.…”

Section: Introductionmentioning

confidence: 99%

Arrays of Pentacene Single Crystals by Stencil Evaporation

Fesenko

Flauraud

Xie

et al. 2016

Crystal Growth & Design

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In order to realize high-performance organic thin-film transistors (TFT), two parameters of the organic semiconducting layer are desired: single crystallinity for high mobility, and patterning for low off currents. High-quality single crystals can be fabricated using vapor techniques such as physical vapor transport (PVT) but they require high temperatures close to thermodynamic 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 2 equilibrium, for example, 240°C for pentacene. Such high temperatures are not ideal for TFT fabrication on plastic substrates and limit the use of PVT in flexible electronics applications.In this work arrays of pentacene single crystals were directly deposited at low temperature of 40°C by vacuum thermal evaporation through micro-fabricated stencil masks (stencil lithography). By decreasing the stencil aperture size down to 1 µm x 1 µm, we were able to limit the nucleation area until only one grain per aperture is nucleated and grown. We studied systematically scaling effects for large singe crystal growth and discuss details of the growth morphology. We found for instance that the formed pentacene crystals are one monolayer thick and the crystal area is much larger than the aperture size. This can be explained by the diffusion of adsorbed molecules on the surface laterally under the shadow mask, where they are protected from other impinging molecules. The diffusion away from the impinging area under the aperture affects the nucleation density inside this area and was used to calculate the diffusion length to nucleation λ N = 0.66 ± 0.11 µm of pentacene on SiO 2 at 40°C. Our diffusion-driven growth of organic single crystals by stencil lithography is a direct method to grow patterned arrays of single crystalline organic thin-film semiconductor layers.

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“…semiconductors showing large p-and n-type mobilities 1-4 , dielectrics and circuit methodologies providing low power consumption [5][6][7][8] and smart production methods suitable for flexible substrates [9][10][11][12] have been developed. Much attention has focussed on realizing electrically and environmentally stable OTFTs required to successfully implement complex systems such as radio frequency identification (RFID) tags 10,[13][14][15][16] .…”

mentioning

confidence: 99%

Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin‐Film Memory Transistors

Burkhardt¹,

Jedaa²,

Novák³

et al. 2010

Advanced Materials

115

121

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Citation for published item:furkh rdtD wF nd ted D eF nd xov kD wF nd i elD eF nd o¤ %t hovskyD uF nd tell iD pF nd rirs h D eF nd r likD wF @PHIHA 9gon ept of mole ul r h rge stor ge diele tri l yer for org ni thinE(lm memory tr nsistorsF9D edv n ed m teri lsFD PP @PQAF ppF PSPSEPSPVF Further information on publisher's website:httpXGGdxFdoiForgGIHFIHHPG dm FPHIHHHHQH Publisher's copyright statement: his is the epted version of the following rti leX furkh rdtD wF nd ted D eF nd xov kD wF nd i elD eF nd o¤ %t hovskyD uF nd tell iD pF nd rirs h D eF nd r likD wF @PHIHA 9gon ept of mole ul r h rge stor ge diele tri l yer for org ni thinE(lm memory tr nsistorsF9D edv n ed m teri lsFD PP @PQAF ppF PSPSEPSPVD whi h h s een pu lished in (n l form t httpXGGdxFdoiForgGIHFIHHPG dm FPHIHHHHQHF his rti le m y e used for nonE ommer i l purposes in ord n e ith ileyE gr erms nd gonditions for selfE r hivingFAdditional information:Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. In this work we report on a novel concept of an electrically programmable selfassembled molecular gate dielectric layer for OTFTs (see figure 1a) that can be reversibly charged and discharged and retains these digital states even when the supply voltage is removed. Due to the small thickness of the dielectric stack (app. 5.7 nm), the memory transistors operate with very small program and erase voltages of ± 2 V. Despite the extremely small dielectric thickness, the retention time is already promising (~6 hours with a read voltage of -750 mV applied continuously). The dielectric is a mixed monolayer of aliphatic and C 60 -functionalized phosphonic acid molecules (app. 2.1 nm thickness) on a patterned and plasma-oxidized aluminum gate electrode on a glass substrate. The aluminum oxide (AlO x ) contributes with a thickness of 3.6 nm to the dielectric layer stack 6 . As the aliphatic component, n-octadecylphosphonic acid 1 was chosen, which has already shown excellent insulating characteristics as the gate dielectric 6 . As the charge storage component, the C 60 -derivative 2 was synthesized to take advantage of the strong acceptor properties and reversible redox behavior of C 60 (Figure 1b and Supplementary Information SI-1) and of the self-assembly properties induced by the C 18 -aliphatic tail with phosphonic acid anchor group.Mixed self-assembled monolayers of 1 and 2 were created by a simple "one pot" solution content) have a relatively small memory ratio of 2.5 (see Section I in Figure 3b), the devices

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Patterning organic single-crystal transistor arrays

Cited by 983 publications

References 27 publications

Periodic Organic–Inorganic Halide Perovskite Microplatelet Arrays on Silicon Substrates for Room‐Temperature Lasing

Periodic Organic–Inorganic Halide Perovskite Microplatelet Arrays on Silicon Substrates for Room‐Temperature Lasing

Arrays of Pentacene Single Crystals by Stencil Evaporation

Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin‐Film Memory Transistors

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