1997
DOI: 10.1021/cm970276e
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Patterning of SnO2 Thin Films by Combination of Lithographic Photoirradiation and Pyrolysis of an Organotin Polymer

Abstract: A lithographic photoirradiation and following pyrolysis of organotin polymer (poly(4-((trimethylstannyl)methyl)styrene)) thin films afforded a pattern of SnO2 thin films, where photochemical cross-linking of the polymer was necessary for the formation of the SnO2 films during the pyrolysis.

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Cited by 18 publications
(12 citation statements)
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“…[6][7][8] An integrated device for the semiconductor industry is highly desirable for versatile advanced applications. [9][10][11] The prospect of using pulsed laser deposition processes to fabricate semiconductor oxide thin films continues to drive research towards improving the performance of the semiconducting materials utilized in these devices. Since the properties of materials strongly depend on their micro/ nanostructures, which all result from the fabrication processes, the influence of micro/nanostructural evolution on material properties is especially remarkable for materials science and engineering.…”
Section: Introductionmentioning
confidence: 99%
“…[6][7][8] An integrated device for the semiconductor industry is highly desirable for versatile advanced applications. [9][10][11] The prospect of using pulsed laser deposition processes to fabricate semiconductor oxide thin films continues to drive research towards improving the performance of the semiconducting materials utilized in these devices. Since the properties of materials strongly depend on their micro/ nanostructures, which all result from the fabrication processes, the influence of micro/nanostructural evolution on material properties is especially remarkable for materials science and engineering.…”
Section: Introductionmentioning
confidence: 99%
“…Unfortunately, until now, although SnO 2 has been used widely as transparent conducting electrodes, thin-film heaters, and gas sensors, etc. [4][5][6][7][8][9], no or little efforts were reported to fabricate p-type conducting SnO 2 . In this paper, a method to prepare p-type conducting SnO 2 by doping of indium was reported.…”
Section: Introductionmentioning
confidence: 99%
“…Wet etching has been reported to be relatively difficult because of the high chemical stability of tin dioxide. 3 Although dry etching patterning methods have been successfully demonstrated, they are usually time-consuming, expensive and special equipment is needed. Photopatternable materials directly derived from sol-gel have shown their potential with other types of materials but only a few articles concerning the direct photopatterning of semiconductive oxides exist.…”
Section: Introductionmentioning
confidence: 99%
“…Photopatternable materials directly derived from sol-gel have shown their potential with other types of materials but only a few articles concerning the direct photopatterning of semiconductive oxides exist. [3][4][5][6] Furthermore, in these previous publications high UV-doses, even pulsed UV-lasers, at wavelengths typically below 300 nm were applied to pattern the material. In addition, all of those publications, in the case of tin oxides, concern only the production of directly photopatternable pure tin dioxide.…”
Section: Introductionmentioning
confidence: 99%