Patterning and Visualizing Self-Assembled Monolayers with Low-Energy Electrons

Krupke, Ralph; Malik, Sharali; Weber, Heiko B.; Hampe, Oliver; Kappes, Manfred M.; Löhneysen, H. v.

doi:10.1021/nl025679e

Cited by 41 publications

(41 citation statements)

References 21 publications

(28 reference statements)

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“…To conclude this section, we note that VC Type 1 due to charging is minimized in our experiment by the primary electron penetration depth of 1.5 μm at 10 keV [32,33] being signifi cantly larger than the oxide thickness of 800 nm. Most of the primary electrons pass through the oxide into the silicon gate and are removed by the gate bias circuit.…”

Section: Nano Researchmentioning

confidence: 78%

Imaging electronic structure of carbon nanotubes by voltage-contrast scanning electron microscopy

Vijayaraghavan¹,

Blatt

Marquardt

et al. 2008

Nano Res.

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We introduce voltage-contrast scanning electron microscopy (VC-SEM) for visual characterization of the electronic properties of single-walled carbon nanotubes. VC-SEM involves tuning the electronic band structure and imaging the potential profi le along the length of the nanotube. The resultant secondary electron contrast allows to distinguish between metallic and semiconducting carbon nanotubes and to follow the switching of semiconducting nanotube devices, as confi rmed by in situ electrical transport measurements. We demonstrate that high-density arrays of individual nanotube devices can be rapidly and simultaneously characterized. A leakage current model in combination with fi nite element simulations of the device electrostatics is presented in order to explain the observed contrast evolution of the nanotube and surface electrodes. This work serves to fi ll a void in electronic characterization of molecular device architectures.

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Section: Nano Researchmentioning

confidence: 78%

Imaging electronic structure of carbon nanotubes by voltage-contrast scanning electron microscopy

Vijayaraghavan¹,

Blatt

Marquardt

et al. 2008

Nano Res.

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“…Other studies employed the deposition of aminosilanes through a poly(methylmethacrylate) (PMMA) mask or an unfunctionalized SAM that was patterned by electron beam lithography. [237][238][239] In this way colloidal particles and carbon nanotubes were deposited selectively on the amine-modified parts of the substrate. Recently, electron beam irradiation was used to induce chemical transformations in monolayers.…”

Section: Electron Beam Lithographymentioning

confidence: 99%

Engineering Silicon Oxide Surfaces Using Self‐Assembled Monolayers

2005

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Although a molecular monolayer is only a few nanometers thick it can completely change the properties of a surface. Molecular monolayers can be readily prepared using the Langmuir-Blodgett methodology or by chemisorption on metal and oxide surfaces. This Review focuses on the use of chemisorbed self-assembled monolayers (SAMs) as a platform for the functionalization of silicon oxide surfaces. The controlled organization of molecules and molecular assemblies on silicon oxide will have a prominent place in "bottom-up" nanofabrication, which could revolutionize fields such as nanoelectronics and biotechnology in the near future. In recent years, self-assembled monolayers on silicon oxide have reached a high level of sophistication and have been combined with various lithographic patterning methods to develop new nanofabrication protocols and biological arrays. Nanoscale control over surface properties is of paramount importance to advance from 2D patterning to 3D fabrication.

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“…However, this problem is readily overcome with the use of low energy electrons and even individual CNTs can be imaged via SEM. [93,[101][102][103] The work of Zhang et al [93] highlights that SEM imaging of individual nanotubes can still be challenging with routine approaches not able to image nanotubes and coupling of SEM imaging with another technique (in this case Raman microscopy) is a powerful approach.…”

Section: Atomic Force and Scanning Electron Microscopy Analysismentioning

confidence: 99%

Carbon Nanotubes Anchored to Silicon for Device Fabrication

et al. 2010

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This report highlights recent progress in the fabrication of vertically aligned carbon nanotubes (VA-CNTs) on silicon-based materials. Research into these nanostructured composite materials is spurred by the importance of silicon as a basis for most current devices and the disruptive properties of CNTs. Various CNT attachments methods of covalent and adsorptive nature are critically compared. Selected examples of device applications where the VA-CNT on silicon assemblies are showing particular promise are discussed. These applications include field emitters, filtration membranes, dry adhesives, sensors and scaffolds for biointerfaces.

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Patterning and Visualizing Self-Assembled Monolayers with Low-Energy Electrons

Cited by 41 publications

References 21 publications

Imaging electronic structure of carbon nanotubes by voltage-contrast scanning electron microscopy

Imaging electronic structure of carbon nanotubes by voltage-contrast scanning electron microscopy

Engineering Silicon Oxide Surfaces Using Self‐Assembled Monolayers

Carbon Nanotubes Anchored to Silicon for Device Fabrication

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