Carbon Nanotubes Anchored to Silicon for Device Fabrication

Constantopoulos, Kristina T.; Shearer, Cameron J.; Ellis, Amanda; Voelcker, Nicolas H.; Shapter, Joseph G.

doi:10.1002/adma.200900945

Cited by 27 publications

(24 citation statements)

References 172 publications

(233 reference statements)

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“…The SWCNTs form vertically aligned bundles, consistent with previous observations for SWCNTs chemically attached to substrates using this method [16-18]. Vertical alignment of the SWCNTs is due to two main effects: (a) the hydrophilic hydroxyl groups on the surface repel the hydrophobic walls of the SWCNTs, forcing the SWCNTs away from the surface; and (b) the high density of carboxylic acid groups on the ends of the SWCNTs promotes end-on surface attachment.…”

Section: Resultssupporting

confidence: 87%

Improved field emission stability from single-walled carbon nanotubes chemically attached to silicon

et al. 2012

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Here, we demonstrate the simple fabrication of a single-walled carbon nanotube (SWCNT) field emission electrode which shows excellent field emission characteristics and remarkable field emission stability without requiring posttreatment. Chemically functionalized SWCNTs were chemically attached to a silicon substrate. The chemical attachment led to vertical alignment of SWCNTs on the surface. Field emission sweeps and Fowler-Nordheim plots showed that the Si-SWCNT electrodes field emit with a low turn-on electric field of 1.5 V μm−1 and high electric field enhancement factor of 3,965. The Si-SWCNT electrodes were shown to maintain a current density of >740 μA cm−2 for 15 h with negligible change in applied voltage. The results indicate that adhesion strength between the SWCNTs and substrate is a much greater factor in field emission stability than previously reported.

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Section: Resultssupporting

confidence: 87%

Improved field emission stability from single-walled carbon nanotubes chemically attached to silicon

et al. 2012

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“…10,18 However the chemical functionalization and attachment of DWCNTs and MWCNTs to silicon via the ester attachment described here has not been previously reported. As such, the attachment and alignment of DWCNTs and MWCNTs will be covered in detail.…”

Section: A Surface Characterizationmentioning

confidence: 99%

“…10,12 These surfaces have shown promise in the fields of electrochemistry, 13 photovoltaics, 14 and we have recently reported on field emission. 15 In our initial report we showed the chemical attachment of SWCNTs to silicon is an upscaleable approach to producing a field emission device with low E to ($1.5 V lm À1 ), high b ($6000) and good emission stability.…”

Section: Introductionmentioning

confidence: 99%

“…However, it is difficult to grow the different CNT types without vastly changing the experimental procedure. 10 In addition, the substrate to CNT adhesion is limited to relatively weak noncovalent interactions between CNT, catalyst nanoparticle and substrate. 5,11 The screen printing method is easily interchangeable between the CNT types but there is little control over the alignment of the CNTs.…”

Section: Introductionmentioning

confidence: 99%

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Field emission from single-, double-, and multi-walled carbon nanotubes chemically attached to silicon

Shearer

Fahy

Barr

et al. 2012

Journal of Applied Physics

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The chemical attachment and field emission (FE) properties of single-walled carbon nanotubes (SWCNTs), double-walled carbon nanotubes (DWCNTs), and multi-walled carbon nanotubes (MWCNTs) chemically attached to a silicon substrate have been investigated. A high density of CNTs was revealed by atomic force microscopy imaging with orientation varying with CNT type. Raman spectroscopy was used to confirm the CNT type and diameter on the surfaces. The field emission properties of the surfaces were studied and both current-voltage and Fowler-Nordheim plots were obtained. The SWCNTs exhibited superior FE characteristics with a turn-on voltage (Eto) of 1.28 V μm−1 and electric field enhancement factor (β) of 5587. The DWCNT surface showed an Eto of 1.91 V μm−1 and a β of 4748, whereas the MWCNT surface exhibited an Eto of 2.79 V μm−1 and a β of 3069. The emission stability of each CNT type was investigated and it was found that SWCNTs produced the most stable emission. The differences between the FE characteristics and stability are explained in terms of the CNT diameter, vertical alignment, and crystallinity. The findings suggest that strength of substrate adhesion and CNT crystallinity play a major role in FE stability. Comparisons to other FE studies are made and the potential for device application is discussed.

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“…Similar results were reported on several substrates, such as silicon, quartz and PET. [65][66][67] Recently, this technique was applied to improve the performance of solar cell. [68] In this paper, the esterification reaction between hydroxyl and carboxyl groups was also used to vertically immobilize SWNTs on the tin oxide electrodes.…”

Section: Post Vertical Alignmentmentioning

confidence: 99%

Morphology variation of single walled carbon nanotubes networks by lithography technology for improvement of field effect transistors

Wang¹

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Carbon Nanotubes Anchored to Silicon for Device Fabrication

Cited by 27 publications

References 172 publications

Improved field emission stability from single-walled carbon nanotubes chemically attached to silicon

Improved field emission stability from single-walled carbon nanotubes chemically attached to silicon

Field emission from single-, double-, and multi-walled carbon nanotubes chemically attached to silicon

Morphology variation of single walled carbon nanotubes networks by lithography technology for improvement of field effect transistors

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