Patterning 220-nm pitch DRAM patterns by using double mask exposure

Nam, Dongseok; Seong, Nakgeuon; Cho, Han-Ku; Moon, Joo-Tae; Lee, Sangin

doi:10.1117/12.389017

Cited by 3 publications

(2 citation statements)

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“…7) For the 90nm node, NILS is very low at any transmission, and annular illumination with NA 0.63 will not resolve the feature any more. NILS of annular illumination goes above 1.5 at more than 5% transmission.…”

Section: Fundamental Process Optimizationmentioning

confidence: 99%

Challenge for sub-100-nm DRAM gate printing using ArF lithography with combination of moderate OAI and attPSM

Kim

Vandenberghe

Verhaegen

et al. 2002

21st Annual BACUS Symposium on Photomask Technology

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Mask error effects of attenuated PSM wafer CD and process windows were analyzed by simulation, and proven experimentally for dense line applications. Among possible mask errors, mask CD variations dominate wafer CD control like a conventional binary mask, but phase and transmission errors are also significant especially when a defocus condition is applied. There is an apparent trend of MEEF versus mask bias. It is increased as mask bias goes towards the positive direction, i.e., overexposure condition, where process window can be maximized. Therefore mask bias should be chosen carefully on the basis of small MEEF as well as large process window. Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/20/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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Section: Fundamental Process Optimizationmentioning

confidence: 99%

Challenge for sub-100-nm DRAM gate printing using ArF lithography with combination of moderate OAI and attPSM

Kim

Vandenberghe

Verhaegen

et al. 2002

21st Annual BACUS Symposium on Photomask Technology

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“…With these three source shapes simulations are carried out with Prolith to study the aberration sensitivity. The simulations are carried out using the LPM model and Z 10 KDV EHHQ DVVXPHG 7KH VLPXODWLRQV DUH GHVFULEHG LQ PRUH GHWDLO LQ reference [9]. Only the horizontal structures are taken into account, since this is the critical direction as described in section 6.1.…”

Section: Optimized Illumination Source Shapementioning

confidence: 99%

Printing 130-nm DRAM isolation pattern: Zernike correlation and tool improvement

et al. 2001

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To meet lithographic requirements for the 130nm generation, the influence of aberrations on printing of various circuit patterns is investigated. This paper shows such a process for specific patterns that are sensitive to odd aberrations, coma and three wave. The aberration sensitivities are calculated, and the effect on printing these patterns predicted and experimentally verified. This analysis leads to slight changes in lens adjustment strategy to accommodate the printing of specific DRAM patterns. Additional improvements in materials and surface figures, as well as reduction in process-induced aberrations and associated RMS wave front error, enable the production of tools that are fully capable of printing the 130nm device generation.The importance of collaboration between makers of lithography tools and their customers cannot be underestimated in finding tool specific limitations. Because of the length of the design cycle of lithography tools it is necessary to perform analysis of device patterns often many years in advance. The current work also indicates that patterns that have historically been used to determine lens specifications, such as dense and isolated lines, are insufficient to fully determine lens specifications.This paper also outlines techniques that can be used to reduce aberration sensitivities by use of resolution enhancement techniques. This is another area where close interaction between vendor and customer is needed.

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Optimization of Dipole Off-Axis Illumination by 1st-Order Efficiency Method for Sub-120 nm Node with KrF Lithography

Kim

Bang

et al. 2000

Jpn. J. Appl. Phys.

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To extend the limitation of KrF lithography into the 110 nm design rule region, dipole off-axis illumination (OAI) is suggested. We have investigated the availability of the 1st-order efficiency as a method of optimization and confirmed it in the conventional OAI. By the 1st-order-efficiency method, we have designed two dipole apertures that are capable of resolving horizontal and vertical dense patterns, and have evaluated the basic performance of the modified dipole apertures. To verify the applicability of the modified dipole apertures to memory devices, we tested a variety of patterns and obtained fine patterns with the help of optical proximity correction (OPC). In this study, we found that the optimized dipole OAI can serve as an extension method of KrF lithography for 110 nm devices.

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Patterning 220-nm pitch DRAM patterns by using double mask exposure

Cited by 3 publications

References 0 publications

Challenge for sub-100-nm DRAM gate printing using ArF lithography with combination of moderate OAI and attPSM

Challenge for sub-100-nm DRAM gate printing using ArF lithography with combination of moderate OAI and attPSM

Printing 130-nm DRAM isolation pattern: Zernike correlation and tool improvement

Optimization of Dipole Off-Axis Illumination by 1st-Order Efficiency Method for Sub-120 nm Node with KrF Lithography

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