Patterned ion-sliced lithium niobate for hybrid photonic integration on silicon

Chen, Li; Nagy, Jonathan Tyler; Reano, Ronald M.

doi:10.1364/ome.6.002460

Cited by 18 publications

(7 citation statements)

References 34 publications

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“…The corresponding effective electrooptic coefficient 33 2.2 pm/V r  can be comparable to that of III-V materials, though it is about an order of magnitude smaller than that in lithium niobate, which has 33 33 pm/V r  [204]. One other current approach is to try to hybridize lithium niobate on silicon [205], [206] for such electrorefractive modulators.…”

Section: ) Electric Field Mechanisms -Pockels Effectmentioning

confidence: 99%

Attojoule Optoelectronics for Low-Energy Information Processing and Communications

Miller

2017

J. Lightwave Technol.

574

406

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Optics offers unique opportunities for reducing energy in information processing and communications while simultaneously resolving the problem of interconnect bandwidth density inside machines. Such energy dissipation overall is now at environmentally significant levels; the source of that dissipation is progressively shifting from logic operations to interconnect energies. Without the prospect of substantial reduction in energy per bit communicated, we cannot continue the exponential growth of our use of information. The physics of optics and optoelectronics fundamentally addresses both interconnect energy and bandwidth density, and optics may be the only scalable solution to such problems. Here we summarize the corresponding background, status, opportunities, and research directions for optoelectronic technology and novel optics, including sub-femtojoule devices in waveguide and novel 2D array optical systems. We compare different approaches to low-energy optoelectronic output devices and their scaling, including lasers, modulators and LEDs, optical confinement approaches (such as resonators) to enhance effects, and the benefits of different material choices, including 2D materials and other quantum-confined structures. With such optoelectronic energy reductions, and the elimination of line charging dissipation by the use optical connections, the next major interconnect dissipations are in the electronic circuits for receiver amplifiers, timing recovery and multiplexing. We show we can address these through the integration of photodetectors to reduce or eliminate receiver circuit energies, free-space optics to eliminate the need for timing and multiplexing circuits (while also solving bandwidth density problems), and using optics generally to save power by running large synchronous systems. One target concept is interconnects from ~ 1 cm to ~ 10 m that have the same energy (~ 10fJ/bit) and simplicity as local electrical wires on chip.

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Section: ) Electric Field Mechanisms -Pockels Effectmentioning

confidence: 99%

Attojoule Optoelectronics for Low-Energy Information Processing and Communications

Miller

2017

J. Lightwave Technol.

574

406

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“…The e-beam resist mask usually has low selectivity to LN, so thick resist is normally required, however, this will greatly limit fabrication resolution and pattern density. Alternatively, multilayer masking schemes have been developed, such as stacking multiple e-beam resist layers or adding hard mask layers [e.g., nickel [31,32] , chromium (Cr) [33,34] , silicon [35,36] , or SiO 2 [37,38] ]. Although these methods provide the required selectivity, the multiple patterning, cleaning, and etching steps greatly increase the complexity of the process.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of lithium niobate metasurfaces via a combination of FIB and ICP-RIE

Jin

Cao

et al. 2022

Chin. Opt. Lett.

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Lithium niobate (LN) metasurfaces have emerged as a new platform for manipulating electromagnetic waves. Here, we report a fabrication technique for LN nano-grating metasurfaces by combining focused ion beam (FIB) milling with inductively coupled plasma reactive ion etching (ICP-RIE). Steep sidewalls with angles larger than 80°are achieved. Sharp quasi-bound states in the continuum are observed from our metasurfaces. The measured transmission spectra show good agreement with the numerical simulations, confirming the high quality of the fabricated metasurfaces. Our technique can be applied to fabricate the LN metasurfaces with sharp resonances for various applications in optical communications, on-chip photonics, laser physics, sensing, and so on.

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“…6,8) In addition, an organic adhesive has been reported to bond LiNbO 3 and Si. [9][10][11][12][13] Surface-activated bonding (SAB) is an alternative technique that allows the room temperature direct bonding of dissimilar materials. 5,[14][15][16][17][18] Although the conventional SAB method is not suitable for the direct bonding of oxides, 19,20) a modified SAB process [21][22][23][24][25] as well as an atomic diffusion bonding method 26,27) have been developed, both of which utilize a metal nanoadhesive layer.…”

Section: Introductionmentioning

confidence: 99%

Bonding of LiNbO₃ and Si wafers at room temperature using Si nanolayers

Watanabe

Utsumi

Takigawa

2021

Jpn. J. Appl. Phys.

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We report the room temperature bonding of LiNbO3 and Si wafers based on the use of Si nanolayers. The proposed method employs physical sputtering, which simultaneously activates the surface of an etched Si wafer and forms a Si nanolayer on the surface of a LiNbO3 wafer. Following sputtering, both wafers are immediately brought into contact and the newly formed Si nanolayer acts as a nanoadhesive. The data presented herein demonstrate that this technique is more effective at directly bonding LiNbO3 and Si than the conventional surface-activated bonding method. Following activation, the bonded surface energy, which reflects the bond strength, was estimated to be approximately 2.2 J m−2. This result indicates that the bonding was strong enough to withstand the processes associated with the fabrication of microelectronics devices, including wafer thinning.

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Patterned ion-sliced lithium niobate for hybrid photonic integration on silicon

Cited by 18 publications

References 34 publications

Attojoule Optoelectronics for Low-Energy Information Processing and Communications

Attojoule Optoelectronics for Low-Energy Information Processing and Communications

Fabrication of lithium niobate metasurfaces via a combination of FIB and ICP-RIE

Bonding of LiNbO₃ and Si wafers at room temperature using Si nanolayers

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Patterned ion-sliced lithium niobate for hybrid photonic integration on silicon

Cited by 18 publications

References 34 publications

Attojoule Optoelectronics for Low-Energy Information Processing and Communications

Attojoule Optoelectronics for Low-Energy Information Processing and Communications

Fabrication of lithium niobate metasurfaces via a combination of FIB and ICP-RIE

Bonding of LiNbO3 and Si wafers at room temperature using Si nanolayers

Contact Info

Product

Resources

About

Bonding of LiNbO₃ and Si wafers at room temperature using Si nanolayers