Patterned ion beam implantation of Co ions into a SiO₂thin film via ordered nanoporous alumina masks

Abstract

Spatially patterned ion beam implantation of 190 keV Co(+) ions into a SiO(2) thin film on a Si substrate has been achieved by using nanoporous anodic aluminum oxide with a pore diameter of 125 nm as a mask. The successful synthesis of periodic embedded Co regions using pattern transfer is demonstrated for the first time using cross-sectional (scanning) transmission electron microscopy (TEM) in combination with analytical TEM. Implanted Co regions are found at the correct relative lateral periodicity given by the mask and at a depth of about 120 nm.

Nanopatterning by ion implantation through nanoporous alumina masks

“…17,18 Alternatively the well-established process of anodisation of aluminium oxide (AAO), 19,20 exploiting self-organized lateral pore-ordering by strain-equilibration, has been proposed as patterning mask, although initially more successful for sputtering and deposition rather than implantation. [21][22][23][24][25][26][27] In this work we present the first successful pattern transfer through AAO-masked implantation, which is directly documented by high-resolution imaging. A crucial element is the introduction of a novel sandwich technique, attaching an ultra-thin AAO mask onto an electron transparent membrane as a ''substrate''.…”

Co-Clustering Via Nanochannel-Membrane Modulated Ion Implantation into Si3N4 Observed By Plan-View Aberration-Corrected STEM And EELS

“…In extension of our earlier work [5], see also Fig 2a, here we use electron transparent thin Si 3 N 4 membranes as substrate to avoid any ion milling for TEM specimen preparation, and to allow planview rather than cross-sectional modes of imaging. Co ions have been implanted with a fluence of 5 ×10 16 ions cm -2 at 30 keV.…”