Patterned Growth of Vertically Aligned ZnO Nanowire Arrays on Inorganic Substrates at Low Temperature without Catalyst

Xu, Sheng; Wei, Yaguang; Kirkham, Melanie J.; Liu, Jin; Mai, Wenjie; Davidović, Dragomir; Snyder, Robert L.; Wang, Zhong Lin

doi:10.1021/ja806952j

Cited by 284 publications

(262 citation statements)

References 22 publications

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“…Due to a small lattice mismatch, almost perfectly vertically aligned ZnO nanowire arrays can be grown on GaN (n-type [48] and p-type [145][146][147][148][149]), AlN, SiC, Al 2 O 3 , and MgAl 2 O 4 substrates [150], either by hydrothermal decomposition [151] or electrodeposition. In particular, ZnO and GaN have the same wurtzite-type structure with a low lattice mismatch of 1.8% [152], which is much smaller than that (12.7%) with Au(111).…”

Section: N-gan/p-ganmentioning

confidence: 99%

“…Since photolithography has a bottleneck arising from the diffraction limit of UV light, a combination of electron beam lithography and a wet chemical growth method has been developed [48]. Electrons are accelerated by tens of kilovolts and have a wavelength on the order of Ångstroms, which gives a much higher resolution than conventional photolithography [274].…”

Section: Electron Beam Lithographymentioning

confidence: 99%

“…Electrospinning gives polycrystalline fibers. Comparatively speaking, wet chemical methods are attractive for several reasons: they are low cost, less hazardous, and thus capable of easy scaling up [46,47]; growth occurs at a relatively low temperature, compatible with flexible organic substrates; there is no need for the use of metal catalysts, and thus it can be integrated with well-developed silicon technologies [48]; in addition, there are a variety of parameters that can tuned to effectively control the morphologies and properties of the final products [49,50]. Wet chemical methods have been demonstrated as a very powerful and versatile technique for growing 1D ZnO nanostructures.…”

Section: Introductionmentioning

confidence: 99%

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One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, positioncontrolled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

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Section: N-gan/p-ganmentioning

confidence: 99%

Section: Electron Beam Lithographymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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“…We trimmed the SC/40 database by deleting seven of the semiconductors for which there are no experimental values for either the lattice constant, the bandgap, or both and three semiconductors for which we had serious difficulties in obtaining converged self-consistent field solutions, even using a very high number of k points. This leaves 30 semiconductors, to which we added ZnO data 32,33 because of its importance in applications, [34][35][36][37][38] and strong theoretical interest, [39][40][41][42][43] for a total of 31 semiconductors. We then created two databases, SLC34 with 34 semiconductor lattice constants and SBG31 with 31 semiconductor bandgaps.…”

Section: Test Set and Computational Detailsmentioning

confidence: 99%

Performance of the M11-L density functional for bandgaps and lattice constants of unary and binary semiconductors

Peverati¹,

Truhlar²

2012

The Journal of Chemical Physics

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The recently developed SOGGA11 and M11-L density functionals have been tested for the prediction of bandgaps and lattice constants by comparing to databases containing 31 bandgaps and 34 lattice constants. To make a comparative assessment we also test several other density functionals against the same databases; in particular, we test the local spin density approximation, PBE, PBEsol, SOGGA, TPSS, revTPSS, and M06-L local density functionals and the HSE screened-exchange hybrid nonlocal density functional; and for a subset of 13 lattice constants we also compare the mean errors to those of the AM05 and WC local density functionals and the HISS and HSEsol nonlocal density functionals. The tests show that, of the ten functionals tested against all 65 data, the SOGGA, PBEsol, and HSE functionals are the most accurate for lattice constants, whereas the HSE, M11-L, and M06-L density functionals are the most accurate for bandgaps. However, the SOGGA11 density functional is the most accurate generalized gradient approximation for bandgaps.

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“…to remove the metal catalyst particles completely after the tube production process [23]. The metal catalyst residues are incompatible with silicon semiconductor technology [24], thus hampering the use of carbon nanotubes in electronics. In many cases, the catalyst particles are covered by a carbon shell, which imposes additional problems for the non-destructive purification of carbon nanotubes such as by treatment with non-oxidizing acids, etc.…”

Section: Introductionmentioning

confidence: 99%

Comparison of structure and yield of multiwall carbon nanotubes produced by the CVD technique and a water assisted method

Bansal

Lal

Srivastava

et al. 2010

Physica B: Condensed Matter

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Multiwall carbon nanotubes (MWNTs) were synthesized using chemical vapor deposition (CVD) technique and a water assisted method. Both methods produced MWNTs. which were characterized by SEM. TEM and Raman studies. It was observed that as far as quality is concerned. MWNTs produced by water assisted method are superior as the method does not employ any metal catalyst. However, as far as yield is concerned. CVD is a better method. Multiwall carbon nanotubes produced by water assisted method suffer from the drawback of low yield but have an advantage of production of multiwall carbon nanotubes without using any metal catalyst. at ambient pressure, in an environment friendly manner and using a simple and cost-effective apparatus.

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Patterned Growth of Vertically Aligned ZnO Nanowire Arrays on Inorganic Substrates at Low Temperature without Catalyst

Cited by 284 publications

References 22 publications

One-dimensional ZnO nanostructures: Solution growth and functional properties

One-dimensional ZnO nanostructures: Solution growth and functional properties

Performance of the M11-L density functional for bandgaps and lattice constants of unary and binary semiconductors

Comparison of structure and yield of multiwall carbon nanotubes produced by the CVD technique and a water assisted method

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