Patterned Growth of Boron Nitride Nanotubes by Catalytic Chemical Vapor Deposition

Abstract

For the first time, patterned growth of boron nitride nanotubes is achieved by catalytic chemical vapor deposition (CCVD) at 1200 °C using MgO, Ni, or Fe as the catalysts, and an Al 2 O 3 diffusion barrier as underlayer. The as-grown BNNTs are clean, vertically aligned, and have high crystallinity. Near band-edge absorption ∼6.0 eV is detected, without significant sub-band absorption centers. Electronic transport measurement confirms that these BNNTs are perfect insulators, applicable for future deep-UV photoelectronic devices and high-power electronics.

Recent Advancement on the Optical Properties of Two-Dimensional Molybdenum Disulfide (MoS2) Thin Films

“…Although graphene nanoribbons (GNRs) exhibit a small band-gap due to edge effects, field-effect transistors (FETs) and optoelectronic devices based on GNRs still suffer from a relatively low current on/off ratio (just exceeding 10 4 ) [7]. Although structurally similar to graphene thin layers of h-BN (boron nitride nanosheets, BNNSs [8,9]) and their nanotubular structures (boron nitride nanotubes, BNNTs [10][11][12][13]) have a 6 eV band-gap, and are therefore not interesting as a material for FETs. In contrast, TMDCs have band-gaps of approximately 1-2 eV [14,15].…”

Interfacial Interactions in 1D and 2D Nanostructure-Based Material Systems

“…MWCNTs typically possess metallic behaviors. In contrast, BNNTs possess a large bandgap (*5.5 eV) [7,[27][28][29] that is independent of their chirality vectors, and are considered as excellent electrical insulators. BNNTs have a strong resistant to oxidation at high temperature [30], and are inert to almost all harsh chemicals [31].…”

Synthesis of vertically aligned flower-like morphologies of BNNTs with the help of nucleation sites in Co–Ni alloy

“…PLD was used to deposit a uniform thin film of MgO on Si substrate and thermal CVD technique was used to grow BNNTs from B, MgO and FeO as precursors. Though BNNTs were grown in a particular pattern, however, they were only partially vertically aligned and were not strong enough to stand against a slight mechanical compression [23].…”

“…In our previous study [24], we have successfully grown vertically aligned BNNTs on Si substrate by combining the logic of vertically aligned CNTs [25] and Pattern growth of BNNTs [23]. In that technique, a uniform thin film of 1.5 mm was first deposited at the shining surface of Si substrate.…”