Pattern transfer processes for 157-nm lithography

Miyoshi, S; Furukawa, Takamitsu; Watanabe, Hiroyuki; Irie, Shigeo; Itani, Toshiro

doi:10.1117/12.474221

Cited by 7 publications

(3 citation statements)

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“…For comparison purposes, the critical index and half pitches are also listed in Table II assuming the interfering beams are incident at ±60°. 6,21,23 To demonstrate patterning with the partially fluorinated immersion fluids, we have chosen to use a fluorine-doped fused silica prism.…”

Section: Immersion Interference Lithography Systemmentioning

confidence: 99%

Immersion patterning down to 27nm half pitch

Bloomstein

Fedynyshyn

Pottebaum

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inTalbot effect immersion lithography by self-imaging of very fine grating patterns J. Vac. Sci. Technol. B 30, 06FG02 (2012); 10.1116/1.4767440High-speed plasmonic nanolithography with a solid immersion lens-based plasmonic optical head Liquid immersion interference lithography at 157 nm has been used to print gratings of 27 nm half pitch with a fluorine-doped fused silica prism having index of 1.66. In order to achieve these dimensions, new immersion fluids have been designed and synthesized. These are partially fluorinated organosiloxanes with indexes up to 1.5. Their absorbance is on the order of 0.4/ m ͑base 10͒, enabling the use of liquid films with micron-size thickness. To utilize these semiabsorptive fluids, an immersion interference printer has been designed, built, and implemented for handling micron-scale liquid layers.

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Section: Immersion Interference Lithography Systemmentioning

confidence: 99%

Immersion patterning down to 27nm half pitch

Bloomstein

Fedynyshyn

Pottebaum

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…l 1). a type resist patterns (L/S) were successfully transferred to the underlying spin-on carbon HM using N2/02 RIE [6]. Features like 60 nm L/S with an aspect ratio of more than 5 were demonstrated in Fig.…”

Section: Lithographic Evaluationmentioning

confidence: 99%

Development of SSQ Based 157 nm Photoresist.

Hung

Yamachika

Iwasawa³

et al. 2002

J. Photopol. Sci. Technol.

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Siloxane/silsesquioxane (SSQ) and fluorocarbon` materials have been identified to be relatively transparent at 157 nm. While the main stream of material research effort has been focused on the synthesis of fluorocarbon polymers, we have made significant progress on developing silsesquioxane polymers for 157 nm photoresist application. Our current SSQ based photoresists (a, s, and 8 type shown in this paper) have absorbance value ranging from 3.4 to 2.5 µm"' . With a 1200 A thickness, a type has demonstrated 60nm L/S using a 0.85 NA F2 Exitech tool with an alt-PSM and c and 6 type have demonstrated 75nm L/S using a 0.60 NA tool. a type resist patterns (L/S) have been successfully transferred down to underlying spin-on carbon hard mask (HM) using N2/02 RIE. Progress also has been made on reducing the absorbance of SSQ polymers. A new ?. type SSQ polymer showed absorbance value of 1.66 µm'. The design concept and physical properties of synthesized SSQ polymers are presented. Lithographic performance of SSQ based resists is also discussed.

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“…Although some fluoropolymers showed high reactive ion etching (RIE) durability comparable to that of an ArF resist [10], transferring the pattern to the underlayer is considered much more difficult for 157-nm lithography than for conventional 248-nm or 193-nm lithography. However, there are only a few reports on pattern transfer for 157-nm lithography [12][13].…”

Section: Introductionmentioning

confidence: 99%

Hard Mask Process Using Chemically Amplified 157-nm Resists.

Furukawa

Miyoshi

Watanabe

et al. 2002

J. Photopol. Sci. Technol.

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We describe and evaluate a pattern transfer process suitable for 157-nm lithography. It consists of a hard mask (HM) process using an organic bottom anti-reflective coating (BARC) I SiN structure. The underlayer of the resist works well as an anti-reflection layer. We obtained a rectangular resist profile using three fluorine-containing resists and a 157-nm microstepper. One of the resists was a side-chain fluorinated resist and the others were main-chain fluorinated resists. The reactive ion etching (RIE) conditions were optimized to obtain a vertical HM profile and minimum critical dimension (CD) shift. Although the resist patterns could be transferred to SiN(70 nm) HM using any of the resists, the remaining resist thickness was insufficient for mass-production of semiconductor devices. Further improvement of the resist material and optimization of the resist process and etching conditions are necessary. However, using the HM pattern, we were able to fabricate a WSi I poly-Si 65-nm gate pattern using a high-NA microstepper (NA=0.85), and a tetra-ethyl-orso-silicate (TEOS)-Si02150-nm contact hole (C/H) pattern using a 0.60-NA microstepper. This clearly demonstrates that our HM process is the best candidate for sub-70nm-node semiconductor devices.

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Pattern transfer processes for 157-nm lithography

Cited by 7 publications

References 0 publications

Immersion patterning down to 27nm half pitch

Immersion patterning down to 27nm half pitch

Development of SSQ Based 157 nm Photoresist.

Hard Mask Process Using Chemically Amplified 157-nm Resists.

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