Development of SSQ Based 157 nm Photoresist.

Abstract

Siloxane/silsesquioxane (SSQ) and fluorocarbon` materials have been identified to be relatively transparent at 157 nm. While the main stream of material research effort has been focused on the synthesis of fluorocarbon polymers, we have made significant progress on developing silsesquioxane polymers for 157 nm photoresist application. Our current SSQ based photoresists (a, s, and 8 type shown in this paper) have absorbance value ranging from 3.4 to 2.5 µm"' . With a 1200 A thickness, a type has demonstrated 60nm L/S using a 0.85 NA F2 Exitech tool with an alt-PSM and c and 6 type have demonstrated 75nm L/S using a 0.60 NA tool. a type resist patterns (L/S) have been successfully transferred down to underlying spin-on carbon hard mask (HM) using N2/02 RIE. Progress also has been made on reducing the absorbance of SSQ polymers. A new ?. type SSQ polymer showed absorbance value of 1.66 µm'. The design concept and physical properties of synthesized SSQ polymers are presented. Lithographic performance of SSQ based resists is also discussed.

Silsesquioxane-based 193 nm bilayer resists: characterization and lithographic evaluation

“…Triphenylsulfonium nonaflate (TPSONf) was employed as our primary photochemical acid generator (PAG) and the casting solvent was propylene glycol methyl ether acetate (PGMEA). 19 F, 29 Si, and 13 C NMR spectra were obtained at room temperature on a Bruker Avance 400 spectrometer. Quantitative 13 C and 29 Si NMR was run at room temperature in acetone-d 6 in an inverse-gated 1 H-decoupled mode using Cr(acac) 3 as a relaxation agent on a Bruker Avance 400 spectrometer.…”

“…19 F, 29 Si, and 13 C NMR spectra were obtained at room temperature on a Bruker Avance 400 spectrometer. Quantitative 13 C and 29 Si NMR was run at room temperature in acetone-d 6 in an inverse-gated 1 H-decoupled mode using Cr(acac) 3 as a relaxation agent on a Bruker Avance 400 spectrometer. For polymer composition analysis 19 F NMR (379 MHz) spectra were also obtained using a Bruker Avance 400 spectrometer.…”

“…The former group is represented by polysiloxane 2,18 and polysilsesquioxane. 17,[19][20][21][22][23][24][25][26][27][28][29][30][31] In the design of chemically amplified bilayer resists, the resist polymer must contain sufficient concentrations of an acid-labile group, an acidic (polar) group, and Si for imaging performance in aqueous base and dry etch resistance in oxygen reactive ion etching (RIE). However, it is sometimes difficult to balance the three requisite functionalities in organic polymers containing Si in the side chain.…”

“…[23][24][25][26] The silsesquioxanebased polymers were a natural choice for the design of 157 nm bilayer resists because of their unusually good transparency. [28][29][30][31] As was the case with single layer 157 nm resists, fluoroalcohol was employed as an acid group. The attractive dissolution behavior of fluoroalcohol-based polymers in aqueous base has promoted the use of the new acid group in 193 nm resists.…”

Development of Novel Photo-Functional Materials Based on Cyclic Oligomers

“…The chemical amplification resist system is one new approach. [42][43][44][45][46] In this system, acid derived from a photo-acid generator promotes removal of the protecting groups, such as tbutyl ester, acetal, trimethylsilyl, and tetrahydropyranyl groups to achieve higher resolution. [47][48][49][50] Recently, many new chemical The n D 's of the calixarene derivative films about 0.1 mm thick, spincoated on a silicon wafer, before and after photo-irradiation were determined by ellipsometry at 632.8 nm.…”