Abstract:To demonstrate the possibility of using EBID masks for sub-10 nm pattern transfer into silicon, first experiments were carried out by using 20-40 nm EBID masks, that were etched by different chemistries. It is experimentally verified that recipes based on hydrogen bromide, chlorine and boron trichloride can selectively etch silicon when using 20-40 nm masks made by EBID. We observed an enhancement of the height ratio, i.e. the ratio of the height of structures before and after etching, up to a factor of 3.5 wh… Show more
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