Pattern matching, simulation, and metrology of complex layouts fabricated by electron beam lithography

Abstract

Deep submicron resist profile simulation and characterization of electron beam lithography system for cell projection and direct writing Validation of design rules taking into account fine details such as line-edge roughness, and full chip layout simulation for design inconsistencies, before actual fabrication, are among the main objectives of current software assisted metrology tools. Line-edge roughness quantification should accompany critical dimension ͑CD͒ measurements since it could be a large fraction of the total CD budget. A detailed simulation and metrology approach of line-edge roughness quantification versus the length scales in a layout are presented in this work using a combination of electron beam simulation for the exposure part, and stochastic simulations for the modeling of resist film, postexposure bake, and resist dissolution. The method is applied also on a test layout with critical dimension of 200 nm and the resulted simulation and scanning electron microscopy images are compared with the aid of a pattern matching algorithm which enables the identification of the desired layout for metrology on a complex layout containing many printed features.

Electron Beam Lithography Simulation for the Patterning of Extreme Ultraviolet Masks

“…For the metrology of complex layouts, special pattern matching algorithm is also developed and applied for the identification of a test pattern from the layout to the actual fabricated design, in order to be used for pattern searching on complex layouts. 9) Metrology on both the experimental and simulated features is performed and discussed.…”