Electron Beam Lithography Simulation for the Patterning of Extreme Ultraviolet Masks

Abstract

Extreme ultraviolet lithography (EUVL) mask is a complex multilayer stack, fabricated with electron-beam lithography. Detailed understanding of the scattering events and energy loss mechanism of the electron beam within this stack is mandatory due to the high accuracy requirements of the fabrication process. Simulation of electron-beam lithography is performed incorporating the details of the mask material-stack and the metrological information of the final layout is quantified. The effect of the Mo-Si multilayer of the EUVL mask blank on the deposited energy in the resist film is investigated. Simulation of complex layout containing features of various sizes down to 100 nm reproduced experimental metrology trends on the fine features of the layout.

Solution-Refined Method for Electrostatic Potential Distribution of Large-Scale Electron Optics

“…Many research studies related to the calculation of electron penetrations within the resist have been published. [33][34][35] However, most of them used an ideal focal spot size, which means that the calculated photoresist lithographic results were based on perfect electron ray focusing. Actually, when fabricating an electronbeam direct-write lithography chamber, asymmetric error may occur, which affects the resolution of the focal spot.…”

Low-voltage electron scattering in advanced extreme ultraviolet masks

“…shallow penetration depths) has not been carefully investigated, especially when a thin resist and absorber are used for advanced technology nodes. [14][15][16][17][18] Therefore, the present study examined the influences of suitable electron penetration depth and incident energy on a resist in conventional argon fluoride (ArF) and EUV masks.…”