Past, present, and future of InP-based photonic integration

Smit, M.K.; Williams, Kevin; Tol, J.J.G.M. van der

doi:10.1063/1.5087862

Cited by 220 publications

(168 citation statements)

References 30 publications

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“…The present target is to develop transceiver (transmitters and receivers) modules working at 1.6 Tb s –1 by 2022. 4 The established technologies based on InP 5 and Si photonics 6 are continuously improving. However, the requirements in terms of bandwidth and power consumption have not been fulfilled in one system yet.…”

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confidence: 99%

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides

et al. 2020

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We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene/polymer/graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p−n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity ∼8 × 10 10 cm −2 at the charge neutrality point, and a large Seebeck coefficient ∼140 μV K −1 , enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices.

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confidence: 99%

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides

et al. 2020

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“…Integrating acousto-optic interactions resulting from stimulated Brillouin scattering has also been explored [172]. Alternatives to conventional and affordable silicon material platform have also been proposed as a method for creating and/or complementing photonic integrated circuits, including InP [173], van der Waals materials [174], photonic crystals [175], and graphene [176]. Prominent developments in on-chip nanophotonics shape global trends and future challenges in the field.…”

Section: Global Trends and Future Challengesmentioning

confidence: 99%

On-chip nanophotonics and future challenges

et al. 2020

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On-chip nanophotonic devices are a class of devices capable of controlling light on a chip to realize performance advantages over ordinary building blocks of integrated photonics. These ultra-fast and low-power nanoscale optoelectronic devices are aimed at high-performance computing, chemical, and biological sensing technologies, energy-efficient lighting, environmental monitoring and more. They are increasingly becoming an attractive building block in a variety of systems, which is attributed to their unique features of large evanescent field, compactness, and most importantly their ability to be configured according to the required application. This review summarizes recent advances of integrated nanophotonic devices and their demonstrated applications, including but not limited to, mid-infrared and overtone spectroscopy, all-optical processing on a chip, logic gates on a chip, and cryptography on a chip. The reviewed devices open up a new chapter in on-chip nanophotonics and enable the application of optical waveguides in a variety of optical systems, thus are aimed at accelerating the transition of nanophotonics from academia to the industry.

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“…Another fact of the photonic integrated filters is the influence of the losses in the coefficients of the transfer function. This characteristic is more intense when using InP technology [38]. In order to prevent this, semiconductor optical amplifiers (SOA) are placed strategically so the losses are compensated [39].…”

Section: Comb Line Selection Stagementioning

confidence: 99%

Design of a Multipurpose Photonic Chip Architecture for THz Dual-Comb Spectrometers

Betancur-Pérez

Martín-Mateos

Dios

et al. 2020

Sensors

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In this work, we present a multipurpose photonic integrated circuit capable of generating multiheterodyne complex Dual-Combs (DC) THz signals. Our work focuses on translating the functionality of an electro-optic tunable DC system into a photonic chip employing standard building blocks to ensure the scalability and cost efficiency of the integrated device. The architecture we analyze for integration is based on three stages: a seed comb, a mode selection stage and a DC stage. This final DC stage includes a frequency shifter, a key element to improve the final detection of the THz signals and obtain real-time operation. This investigation covers three key aspects: (1) a solution for comb line selection on GHz spaced combs using OIL or OPLL on photonic chips is studied and evaluated, (2) a simple and versatile scheme to produce a frequency shift using the double sideband suppressed carrier modulation technique and an asymmetric Mach Zehnder Interferometer to filter one of the sidebands is proposed, and (3) a multipurpose architecture that can offer a versatile effective device, moving from application-specific PICs to general-purpose PICs. Using the building blocks (BBs) available from an InP-based foundry, we obtained simulations that offer a high-quality Dual-Comb frequency shifted signal with a side mode suppression ratio around 21 dB, and 41 dB after photodetection with an intermediate frequency of 1 MHz. We tested our system to generate a Dual-Comb with 10 kHz of frequency spacing and an OOK modulation with 5 Gbps which can be down-converted to the THz range by a square law detector. It is also important to note that the presented architecture is multipurpose and can also be applied to THz communications. This design is a step to enable a commercial THz photonic chip for multiple applications such as THz spectroscopy, THz multispectral imaging and THz telecommunications and offers the possibility of being fabricated in a multi-project wafer.

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Past, present, and future of InP-based photonic integration

Cited by 220 publications

References 30 publications

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides

On-chip nanophotonics and future challenges

Design of a Multipurpose Photonic Chip Architecture for THz Dual-Comb Spectrometers

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