Passively Q-switched 156  μm all-fiberized laser based on evanescent field interaction with bulk-structured bismuth telluride topological insulator

Koo, Joonhoi; Lee, Junsu; Chi, Cheolhwan; Lee, Ju Han

doi:10.1364/josab.31.002157

Cited by 37 publications

(9 citation statements)

References 34 publications

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“…In addition to research efforts on the electronic and transport properties of TIs, much work has been carried out on their optical properties. Many theoretical studies have been focused on the response of the surface states to light, and several worthy progressive studies have been reported, including the Dirac surface state assisted high-performance broadband photodetection from infrared to terahertz, 14 the circularly polarized light induced helicity-dependent current, 15 the nonlinearity induced passive mode-locked lasers, 16 the warping effect enhanced relative signal-to-noise ratio (SNR), 17 and the linearly polarized light induced polarization dependent photocurrents. 18 Zhang et al 14 predicted that the TI Dirac-like surface state can have strong optical absorption.…”

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confidence: 99%

Bi2Te3 photoconductive detectors on Si

Liu

Song

et al. 2017

Applied Physics Letters

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The peculiar properties of the gapless surface states with a Dirac cone shaped energy dispersion in topological insulators (TIs) enable promising applications in photodetection with an ultra-broad band and polarization sensitivity. Since many TIs can be easily grown on silicon (Si) substrates, TIs on Si could make an alternative route for photon detection of Si photonics. We present good device performances of a Si-based single-crystal bismuth telluride (Bi 2 Te 3) photoconductive detector. Room temperature photo responses to 1064 nm and 1550 nm light illumination were demonstrated. Linear dependences of the photocurrent on both the incident light power and the bias voltage were observed. The main device parameters including responsivity and quantum efficiency were extracted.

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confidence: 99%

Bi2Te3 photoconductive detectors on Si

Liu

Song

et al. 2017

Applied Physics Letters

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“…The simplest approach is to apply a thin film of SA on the face of the fibre [11], however, this results in a relatively low damage threshold. Another approach is to place the SA material on the surface of the partially polished fibre (the so-called D-shape fibre) [12][13]. In this case the damage threshold increases significantly, since only the evanescent field interacts with SA, and an increase of the interaction length results in a strong nonlinear response.…”

Section: Introductionmentioning

confidence: 99%

MOCVD deposition of zinc and bismuth chalcogenides films on the surface of silica optical fibres

Кузнецов¹,

Yakushcheva²,

Savelyev³

et al. 2020

physics

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Metal organic chemical vapour deposition (MOCVD) technology is adapted for the deposition of thin zinc and bismuth chalcogenides films on the surface of silica optical fibres with short tapered sections. Growth runs were carried out in a special tubular quartz reactor at atmospheric pressure of hydrogen at 425°C temperature using ZnEt2, BiMe3, Et2Te and i-Pro2Se as organometallic precursors. During the deposition of chalcogenides, the transmittance spectra of the fibre were recorded in regular short time intervals. In the transmittance spectra of the fibre with a tapered section coated by ZnSe and ZnTe, lossy mode resonances (LMR) were observed at a diameter of the tapered waist below 30 μm. After the deposition of very thin Bi2Te3 and Bi2Se3 island films on the tapered waist with a diameter about 10 μm optical fibres were built into erbium fibre ring lasers. A pulsed generation mode was achieved in some of lasers due to resonator Q-factor modulation. These results can be applied for the design of LMR fibre sensors and passively Q-switch pulsed fibre lasers.

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“…Among the nanomaterials, the TI, as the new Dirac material, has a unique conducting surface, which is topologically protected against scattering by time-reversal symmetry and insulating energy gaps in bulk [22][23][24]. With such a unique physical characteristic, TI has gained huge scientific and technical attention in the field of condensed matters for spintronics and quantum device [24,25]. Apart from the field of condensed matters, a number of demonstrations have been also carried out in field of photonics for the use of TI-based SA for recent years.…”

Section: Introductionmentioning

confidence: 99%

Bi2Te3 Topological Insulator for Domain-Wall Dark Pulse Generation from Thulium-Doped Fiber Laser

et al. 2019

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We have experimentally demonstrated domain-wall (DW) dark pulses from a thulium-doped fiber laser incorporating a topological insulator saturable absorber (SA). The bulk-structured Bi2Te3 was used as the SA, which was constructed on a fiber ferrule platform through the deposition of the Bi2Te3 mixed with distilled water. The DW dark pulses were generated from the thulium-doped fiber laser cavity with a dual wavelength at 1956 nm and 1958 nm. The dark pulse width and the repetition rate were measured as ~10.3 ns and ~20.7 MHz over the pump power of ~80 mW, respectively. To the best of our knowledge, this work is the first demonstrated generation of the DW dark pulse from a thulium-doped fiber laser using nanomaterial-based SA.

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Passively Q-switched 156 μm all-fiberized laser based on evanescent field interaction with bulk-structured bismuth telluride topological insulator

Cited by 37 publications

References 34 publications

Bi2Te3 photoconductive detectors on Si

Bi2Te3 photoconductive detectors on Si

MOCVD deposition of zinc and bismuth chalcogenides films on the surface of silica optical fibres

Bi2Te3 Topological Insulator for Domain-Wall Dark Pulse Generation from Thulium-Doped Fiber Laser

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