1999
DOI: 10.1063/1.123200
|View full text |Cite
|
Sign up to set email alerts
|

Passive Q-switching of fiber lasers using a broadband liquefying gallium mirror

Abstract: Using a nonlinear cavity element, a liquefying gallium mirror, we demonstrate stable, self-starting, passive Q-switching of both erbium and ytterbium fiber laser cavities operating at wavelengths of 1550 and 1030 nm, respectively. The performance at 1550 nm is shown to be equivalent to that achieved with a state of the art semiconductor saturable absorber designed to work at this wavelength. The results highlight the suitability of this tremendously broadband, inexpensive nonlinear medium for a wide range of p… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

0
14
0

Year Published

2004
2004
2023
2023

Publication Types

Select...
8
1

Relationship

1
8

Authors

Journals

citations
Cited by 48 publications
(14 citation statements)
references
References 8 publications
0
14
0
Order By: Relevance
“…surface enhanced Raman spectroscopy (SERS) [27][28][29] , surface enhanced fluorescence 30,31 , Li-ion batteries 32 , waveguiding 33,34 , optical switching 35,36 , phase-change memories 37 or the development of biosensors for the detection of different diseases 38,39 .…”
mentioning
confidence: 99%
“…surface enhanced Raman spectroscopy (SERS) [27][28][29] , surface enhanced fluorescence 30,31 , Li-ion batteries 32 , waveguiding 33,34 , optical switching 35,36 , phase-change memories 37 or the development of biosensors for the detection of different diseases 38,39 .…”
mentioning
confidence: 99%
“…The generation of nanosecond pulse with high peak power is of importance for many applications such as OTDR, lidar, remote sensing and nonlinear optical processes [1][2][3]. Qswitched fiber lasers have been developed for years to obtain pulsed laser beam with pulsewidth ranging from nanoseconds to microseconds.…”
Section: Introductionmentioning
confidence: 99%
“…[18][19][20][21] Particularly important for these applications is the optical reflectivity contrast, expressed as the ratio between the high and low reflectivity values of the two Ga phases. In the visible range this ratio is only (85%)/(53%) for the Ga/glass interface, [1][2][3][4][5][6][7][8][9][10][11][13][14][15][16][17][18][19][20][21] and may be increased by replacing the glass substrate with other dielectric substrates [12] or by coupling the Ga layer to an adjacent optical thin film, such as magnesium fluoride. [22] More recently, the idea of coupling the Ga layer to an optical interference structure has been taken further by proposing to integrate the Ga layer into dedicated optical interference thin film packages [23] in order to design high contrast Ga mirrors.…”
Section: Introductionmentioning
confidence: 97%
“…The significantly different values of the optical constants in the solid and liquid phases of Ga give rise to a significant increase in its light reflectivity. [1][2][3][4][5][6][7][8][9][10][11][12][13] This unusual property serves as a basis for a wide range of optoelectronic applications such as passive Q-switches for lasers, [14,15] all optical switches, [16,17] and phase-change optical memories. [18][19][20][21] Particularly important for these applications is the optical reflectivity contrast, expressed as the ratio between the high and low reflectivity values of the two Ga phases.…”
Section: Introductionmentioning
confidence: 97%