IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers
DOI: 10.1109/mcs.1993.247455
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Passive FET MMIC linearizers for C, X and Ku-band satellite-applications

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Cited by 17 publications
(9 citation statements)
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“…The Astro MMIC linearizers employ a single GaAs MESFET with zero source-drain bias as the non-linear element [4,5]. These MMIC linearizers achieve wider bandwidth and lower insertion loss without sacrificing any other performance characteristics.…”
Section: Mmic Linearizermentioning
confidence: 99%
“…The Astro MMIC linearizers employ a single GaAs MESFET with zero source-drain bias as the non-linear element [4,5]. These MMIC linearizers achieve wider bandwidth and lower insertion loss without sacrificing any other performance characteristics.…”
Section: Mmic Linearizermentioning
confidence: 99%
“…It has the advantages of smaller size, less complexity, and lower cost than other linearization techniques [6], [7]. Various predistortion linearizers, such as the diode linearizer [8], [9], the passive field-effect transistor (FET) [10]- [12], and the base-emitter diode of the heterojunction bipolar transistor (HBT) [13] have been applied to microwave applications below 20 GHz. However, these linearizers [9], [10] usually cause high insertion losses of 6-11 dB, which means we need to add an extra buffer amplifier to compensate for the power-gain loss in microwave frequencies.…”
Section: Introductionmentioning
confidence: 99%
“…Various predistortion linearizers, such as the diode linearizer [8], [9], the passive field-effect transistor (FET) [10]- [12], and the base-emitter diode of the heterojunction bipolar transistor (HBT) [13] have been applied to microwave applications below 20 GHz. However, these linearizers [9], [10] usually cause high insertion losses of 6-11 dB, which means we need to add an extra buffer amplifier to compensate for the power-gain loss in microwave frequencies. In addition, when these linearizers [8]- [12] are integrated with MMIC PAs, they required separate bias circuits which increase the die area.…”
Section: Introductionmentioning
confidence: 99%
“…Various pre-distortion linearizers, such as diode linearizer and passive FET, have been applied to microwave applications under 20 GHz in [4]- [6]. Nevertheless, these linearizers [5], [6] usually cause high insertion losses, 6-11 dB, which means, we need to add an extra buffer amplifier to compensate the power gain loss in microwave frequencies.…”
Section: Introductionmentioning
confidence: 99%
“…Nevertheless, these linearizers [5], [6] usually cause high insertion losses, 6-11 dB, which means, we need to add an extra buffer amplifier to compensate the power gain loss in microwave frequencies.…”
Section: Introductionmentioning
confidence: 99%