Passivation of yellow luminescence of MOCVD grown InGaN/GaN heterostructures by Nitrogen - ion implantation

Pradeep, S.; Palanivelu, K.; Menon, Sumithra Sivadas; Jacob, I. Davis; Singh, Shubra; Baskar, K.

doi:10.1016/j.nimb.2018.07.035

Cited by 2 publications

(4 citation statements)

References 16 publications

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“…The room temperature PL spectra of pristine and implanted samples are shown in figures 7(a) and (b), respectively which were excited using 244 nm UV source. PL results of our previous work (50 keV N + implanted on InGaN using conventional ion implanter) [8] the individual GaN, InGaN and YL peaks are merged and fully deteriorated, whereas these peaks are reliable in the present work and are shown in figure 6(b). There is a vast difference in the emission peaks of pristine and implanted samples due to N + implantation which may have influenced the interstitial displacement of atoms in crystal lattice and resulted in structural changes and compositional fluctuations.…”

Section: Resultscontrasting

confidence: 45%

“…The InGaN layer of the samples IG0, IG1, IG2, and IG4 was referred by the peaks at −1598, −2024, −2107 and −2133 arc-sec, respectively at the left side of the GaN center peak. When compared to pristine sample (IG0) Out plane strain (ε zz ) 10 there is no sharpness in the GaN peak for implanted samples and it can be observed that GaN and InGaN peaks are partially merged, due to the nitrogen ions which may have reached the interface between InGaN and GaN layers and it was obvious from the ion implantation depth profile shown figure 1 [8,10]. There was a shift towards left in the InGaN peaks of implanted samples for increasing ion fluences which clearly shows a shift in composition of In x Ga 1−x N layer of the implanted samples.…”

Section: Resultsmentioning

confidence: 97%

“…The In contents in InGaN layers are obtained as 16, 19, 20 and 20.5% for the samples IG0, IG1, IG2 and IG4, respectively. The shift in In content after implant ation is due to the participation of implanted N + to occupy the nitrogen vacancies present in the pristine samples, which also suppressed the In droplets [8].…”

Section: Resultsmentioning

confidence: 99%

“…The conventional ion implanter has the energy range between 30 keV and 200 keV which inevitably produces high degree of lattice disorders. In order to overcome this, post implantation annealing processes are required [5,8].…”

Section: Introductionmentioning

confidence: 99%

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Structural, optical and electronic properties of low energy N ion implanted InGaN/GaN heterostructures

Pradeep

Palanivelu

Asokan

et al. 2019

J. Phys. D: Appl. Phys.

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The structural, optical, morphological and electrical properties of the low energy N ion implanted InGaN/GaN heterostructures have been investigated. These heterostructures were grown by metal-organic chemical vapor deposition. The compositional fluctuations and crystalline quality of pristine and implanted samples are measured by the high-resolution x-ray diffraction. The tricking asymmetric (1 0 −1 5) GaN and InGaN peaks of ω − 2θ and omega diffraction patterns are then resolved using reciprocal space mapping. The morphology of N ion implanted InGaN sample shows a decrease in density of the V-pits and hillocks with increasing N ion fluences. The atomic percentage of In, Ga and N are estimated using x-ray photoelectron spectroscopy. The Raman studies showed the E 2 high and A 1 (LO) modes of GaN and InGaN for pristine and implanted samples which also confirm that the linear dependence of In composition with the N ion implantation fluences. The photoluminence results confirm the suppression of yellow luminescence peak after implantation. The Hall measurements confirm the enhancement in electron mobility after implantation which inevitably suppressed the carrier concentration with decreased nitrogen vacancies. The low energy N ion implantation increases In composition and reduction of In clusters in the InGaN layer which have a technological significance in InGaN based optoelectronic applications.

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Section: Resultscontrasting

confidence: 45%

Section: Resultsmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Structural, optical and electronic properties of low energy N ion implanted InGaN/GaN heterostructures

Pradeep

Palanivelu

Asokan

et al. 2019

J. Phys. D: Appl. Phys.

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Ion-Induced Electrical Isolation in GaN-Based Platform for Applications in Integrated Photonics

et al. 2019

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GaN based Photonic Integrated Circuits (PICs) have now become a global contender for their wide range of applications owing their physical characteristics. The GaN material system acts as a promising platform; compatible with silicon and sapphire substrates. Both the carrier transport and carrier removal techniques are vital to develop the efficient platform for the integration of photonic circuits. We demonstrate the carrier removal mechanism in silicon (Si) doped GaN (0001) epitaxially grown on c-plane sapphire wafer using ion engineering of the devices. Ion-engineered regions within the active layers of the device are modelled, fabricated and characterized to assess the isolation created. Helium and Carbon ions with predesigned doses and energies are used to irradiate the device structures. We have modelled and fabricated ion-engineered regions within the active layers and studied the carrier transport properties on said regions to isolate that particular part with either of active photonic components placed at the common platform. After ion irradiation, detailed analysis in terms of electric field dependent current characteristics, sheet resistance, carrier mobilities, activation energies, dark and photo currents under zero (ground) and multiple biases are examined to see the extent of charge leakage and to map the charge behavior under nominal operation. Device characteristics under wide regime of annealing temperatures ranging from 300 • C to 1000 • C are mapped to evaluate the thermal stability of implant driven isolated regions. Activation energies of implanted and parent regions has also been studied. The dark and photon driven electric currents at ground and under biased have been measured to investigate the photo-induced transport phenomenon.INDEX TERMS Ion implantation, electrical isolation, photonic integrated circuits, crosstalk.

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Passivation of yellow luminescence of MOCVD grown InGaN/GaN heterostructures by Nitrogen - ion implantation

Cited by 2 publications

References 16 publications

Structural, optical and electronic properties of low energy N ion implanted InGaN/GaN heterostructures

Structural, optical and electronic properties of low energy N ion implanted InGaN/GaN heterostructures

Ion-Induced Electrical Isolation in GaN-Based Platform for Applications in Integrated Photonics

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