Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

Monier, Guillaume; Bideux, L.; Robert-Goumet, Christine; Gruzza, B.; Petit, Matthieu; Lábár, János L.; Menyhárd, M.

doi:10.1016/j.susc.2012.03.006

Cited by 27 publications

(12 citation statements)

References 31 publications

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“…The thickness of the Au layer, 1 Å, was controlled by using x-ray photoelectron spectroscopy (XPS) calibration. 27,28 Aucovered substrates were introduced into the HVPE reactor to be heated from room temperature to the growth temperature, namely 715 • C. During this step, the substrates were kept in an under-saturated As 2 /As 4 atmosphere to favor the formation of Au-Ga liquid droplets on the surface. 29 The GaAs growth was carried out under a H 2 vector flow of 3000 cm 3 /min, with a III/V ratio (ratio of the GaCl partial pressure to the As 4 partial pressure above the substrate) of 4.4, which are standard experimental conditions for the growth of GaAs by HVPE.…”

Section: Vls-hvpe Growth Processmentioning

confidence: 99%

Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation

André

Lekhal

Hoggan

et al. 2014

The Journal of Chemical Physics

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High aspect ratio, rod-like and single crystal phase GaAs nanowires (NWs) were grown by gold catalyst-assisted hydride vapor phase epitaxy (HVPE). High resolution transmission electron microscopy and micro-Raman spectroscopy revealed polytypism-free zinc blende (ZB) NWs over lengths of several tens of micrometers for a mean diameter of 50 nm. Micro-photoluminescence studies of individual NWs showed linewidths smaller than those reported elsewhere which is consistent with the crystalline quality of the NWs. HVPE makes use of chloride growth precursors GaCl of which high decomposition frequency after adsorption onto the liquid droplet catalysts, favors a direct and rapid introduction of the Ga atoms from the vapor phase into the droplets. High influxes of Ga and As species then yield high axial growth rate of more than 100 μm/h. The diffusion of the Ga atoms in the liquid droplet towards the interface between the liquid and the solid nanowire was investigated by using density functional theory calculations. The diffusion coefficient of Ga atoms was estimated to be 3 × 10(-9) m(2)/s. The fast diffusion of Ga in the droplet favors nucleation at the liquid-solid line interface at the center of the NW. This is further evidence, provided by an alternative epitaxial method with respect to metal-organic vapor phase epitaxy and molecular beam epitaxy, of the current assumption which states that this type of nucleation should always lead to the formation of the ZB cubic phase.

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Section: Vls-hvpe Growth Processmentioning

confidence: 99%

Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation

André

Lekhal

Hoggan

et al. 2014

The Journal of Chemical Physics

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“…However, the lattice mismatch between sapphire and GaN is as high as 15%, which leads to a high density of dislocations in LED wafers which reduces the mobility and shortens the lifetime of carriers, and thus decreases the performance of LEDs. 7,8 Many researchers have tried to grow GaN on other materials, such as GaAs, SiC, MgO, MgAl 2 O 4 and ZnO, [9][10][11][12][13] but high-quality epilayers could hardly be obtained because of their relatively large lattice mismatches. 14 Evidently, it is tremendously important to seek a lattice matched substrate for heteroepitaxial growth of high quality GaN-based LED devices.…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

Wang

Yang

2013

J. Mater. Chem. C

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High-quality GaN-based light emitting diode (LED) wafers on La 0.3 Sr 1.7 AlTaO 6 (LSAT) (111) substrates have been demonstrated by molecular beam epitaxy (MBE) for the first time. The structural properties and optoelectronic properties of as-grown LED wafers have been characterized by high-resolution X-ray diffraction (HRXRD), high-resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), photoluminescence (PL), and electroluminescence (EL).The small full-width at half-maximum (FWHM) values for both symmetric (0002) and asymmetric (10 12)HRXRD rocking curves indicate that LED wafers on LSAT (111) substrates are of high crystalline quality, the clear and pronounced Pendellösung fringes of XRD from as-grown multiple quantum wells (MQWs)suggest abrupt InGaN/GaN interfaces with designed layer periodicity and the well controlled composition and thickness of each barrier and well layer with the MQWs, which has also been confirmed by HRTEM characterization. The XRD reciprocal space map (RSM) of the (10 15) plane was used to further study the stress state in GaN-based LED wafers. AFM reveals high quality surface morphology for the GaN-based LED wafers on LSAT substrates, with a root-mean-square (RMS) roughness of 1.6 nm. The PL spectrum shows the band edge emission at 445 nm with a FWHM of 24.0 nm. The EL edge emission is observed at 448 nm with a FWHM of 22.6 nm at an injection current of 20 mA, with the light output power of 4.3 mW and the forward voltage of 3.18 V for the chip size of 300 Â 300 mm 2 , indicating good optoelectronic properties of as-grown GaN-based LEDs on LSAT substrates. This achievement reveals the tremendous potential of GaN-based LEDs on LSAT (111) for optoelectronic device applications.

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“…This nitridation process led to the growth of a 0.8 nm-thick layer of undoped GaN. Following the nitridation step, the samples were annealed at 620 • C for 1 h to crystallize the GaN layer [39,45,46].…”

Section: The Experimentsmentioning

confidence: 99%

Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range

Helal

Benamara²,

Wederni

et al. 2021

Materials

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Au/0.8 nm–GaN/n–GaAs Schottky diodes were manufactured and electrically characterized over a wide temperature range. As a result, the reverse current Iinv increments from 1 × 10−7 A at 80 K to about 1 × 10−5 A at 420 K. The ideality factor n shows low values, decreasing from 2 at 80 K to 1.01 at 420 K. The barrier height qϕb grows abnormally from 0.46 eV at 80 K to 0.83 eV at 420 K. The tunnel mechanism TFE effect is the responsible for the qϕb behavior. The series resistance Rs is very low, decreasing from 13.80 Ω at 80 K to 4.26 Ω at 420 K. These good results are due to the good quality of the interface treated by the nitridation process. However, the disadvantage of the nitridation treatment is the fact that the GaN thin layer causes an inhomogeneous barrier height.

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Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

Cited by 27 publications

References 31 publications

Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation

Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation

Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range

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