Passivation of defects in polycrystalline Cu2O thin films by hydrogen or cyanide treatment

Properties of dc magnetron sputtered Cu2O films prepared at different sputtering pressures

“…The optical band gap of the films formed at the sputtering pressure of 4 Pa was 2.04 eV. It is in agreement with the values of rf magnetron sputtered films [18] and with the bulk value [28]. The refractive index of the films increased from 2.41 to 2.62 with increase of sputtering pressure from 1.5 Pa to 8 Pa.…”

“…Many techniques, such as electrodeposition [5,6], thermal evaporation [7], sol gel [8], solution growth [9], electron beam evaporation [10], pulsed laser deposition [11], spray pyrolysis [12], activated reactive evaporation [13], chemical vapor deposition [14], molecular beam epitaxy [15], dc and rf magnetron sputtering [16][17][18], have been employed to deposit Cu 2 O thin films onto various types of substrates. Among all the deposition techniques, dc reactive magnetron sputtering is one of the best techniques for depositing the films with high deposition rates at relatively low substrate temperatures.…”

Influence of substrate bias voltage on the properties of magnetron sputtered Cu2O films

“…The electro-optical properties of Cu 2 O films depend mainly on the method of preparation and process parameters maintained during the preparation. Cu 2 O films were prepared using various deposition techniques such as thermal oxidation [2], sol-gel [3,4], electrodeposition [5], activated reactive evaporation [6], electron beam evaporation [7] and sputtering [8][9][10][11]. Among the sputtering techniques, DC reactive magnetron sputtering is one of the most useful technique having high deposition rates, uniformity over large areas of the substrates and easy control over the composition of the deposited films.…”

Polycrystalline n ‐ZnO/ p ‐Cu 2 O heterojunctions grown by RF‐magnetron sputtering

“…As mentioned above, the cyanide treatment has an effect of defect passivation in Cu 2 O, and the passivation mechanism may be the termination of Cu-dangling bonds, which give rise to localized energy levels deep in the band-gap [8,9]. To discuss the effect of cyanide treatment on the I-V characteristics, relative band diagrams of n-ZnO and p-Cu 2 O, and heterostructure are shown in Figs.…”

“…As has been reported previously, the electrical and optical properties of Cu 2 O can be significantly improved by cyanide treatment due to the passivation of donor-like defects and non-radiative recombination centers. Such passivation effects may be caused by the termination of dangling bonds [8,9].…”