Properties of dc magnetron sputtered Cu2O films prepared at different sputtering pressures

Characterization of cuprous oxide films prepared by post-annealing of cupric oxide using an atmospheric nitrogen pressure plasma torch

“…5a, b and c give the values of the absorption edge − 2.10, 2.41 and 2.44 eV, respectively. The optical absorption edge for Cu 2 O is compared well with the previous results [1,12]. However, the band gap for CuO is little larger than that found previously [1,2,4,6,8].…”

“…Interestingly, CuO was transformed into Cu 2 O using a simple atmospheric pressure microwave plasma torch. A number of physical, chemical and solid-state methods for synthesizing the copper oxide have been described [1][2][3][4][5][6][7][8][9][10][11][12]. Wieder et al [13] deposited Cu films on glass and investigated the optical properties of copper oxide films.…”

Study of oxidation process of Cr/Cu/Cr thin film electrodes

“…Hence, Cu is oxidized into Cu 2 O at lower anneal temperatures (250, 310 1C), and CuO at higher temperatures (400, 500 1C). Both phases of copper oxides, Cu 2 O [15] and CuO, are semiconductors with significantly higher electric resistivity [16]. In addition, the formation of copper oxides at the surface of Cu grains in the Cu film leads to dramatic reduction of electron transportation between remaining Cu grains.…”

Copper–nickel oxide thin film library reactively co-sputtered from a metallic sectioned cathode

“…Lowering the pressure creates favourable conditions for single crystalline (111) film formation. 17 Different microstructures and morphologies are possible to be obtained for the cuprous oxides during the DC reactive sputtering process usually presenting rough surfaces, 18 which may show photocatalytic reactivity under visible light. 19 The possibility of using Cu 2 O for solar cell applications was also exploited due to its abundance and low fabrication cost.…”