Particle-assisted GaxIn1−xP nanowire growth for designed bandgap structures

Jacobsson, Daniel; Persson, Johan; Kriegner, Dominik; Etzelstorfer, Tanja; Wallentin, Jesper; Wagner, Jakob Birkedal; Stangl, J.; Samuelson, Lars; Deppert, Knut; Borgström, Magnus T.

doi:10.1088/0957-4484/23/24/245601

Cited by 50 publications

(80 citation statements)

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“…In this work, we focus on doped GaInP NWs, while a growth parameter study of undoped GaInP NWs has been reported separately. 13 Hydrogen chloride (HCl) was used to control the radial growth. 13,14 NWs were made non-intentionally doped ("undoped"), using H 2 S for n-doping, using DEZn for p-doping, and finally with an axially defined p-i-n doped structure.…”

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“…23 Ordering is another possible explanation for the relatively low-energy PL, 24 but synchrotron-based x-ray diffraction measurements do not show any signs of this. 13 There may also be In-rich segments, which could be shorter than the resolution in EDS (about 5 nm), and could occur both axially, radially, as observed in GaInN NWs, 25 or at the NW edges as observed in AlInP NW shells. 26 Note, however, that we did not observe radial growth of a Ga-rich shell in TEM, 13 as previously found in MBE-grown GaInP.…”

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confidence: 99%

“…13 There may also be In-rich segments, which could be shorter than the resolution in EDS (about 5 nm), and could occur both axially, radially, as observed in GaInN NWs, 25 or at the NW edges as observed in AlInP NW shells. 26 Note, however, that we did not observe radial growth of a Ga-rich shell in TEM, 13 as previously found in MBE-grown GaInP. 10 At room temperature, the carriers recombine before diffusing to these low-bandgap regions, thereby explaining the observed single peak.…”

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Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

Wallentin

Barrutia

Jansson

et al. 2012

Applied Physics Letters

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Axially defined GaInP single nanowire (NW) p-i-n junctions are demonstrated, with photocurrent response and yellow-green electroluminescence near the indirect bandgap crossover point at 2.18 eV (569 nm). We use DEZn and H2S as p- and n-type dopants, and find that they both affect the material composition and the crystal structure. The photovoltaic efficiency is comparable to single NW devices from binary III-V materials. These results demonstrate the potential of GaInP nanowires as a high-bandgap material for multijunction solar cells and light-emitting devices in the visible regime.

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Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

Wallentin

Barrutia

Jansson

et al. 2012

Applied Physics Letters

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“…Earlier studies report (11À1) oriented twin planes, but only as twin planes (no crystal growth towards [11À1]) and without relation to NW kinking. 28,29 These twin planes were attributed to abrupt compositional changes 28 or gold clustering. 29 Metal clustering is a more likely cause for such defects in the NWs grown on AZO, since they exhibit no abrupt changes in composition.…”

Section: Resultsmentioning

confidence: 99%

GaAs nanowires grown on Al-doped ZnO buffer layer

Haggrén¹,

Perros²,

Dhaka³

et al. 2013

Journal of Applied Physics

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We report a pathway to grow GaAs nanowires on a variety of substrates using a combination of atomic layer deposition and metallo-organic vapor phase epitaxy (MOVPE). GaAs nanowires were grown via MOVPE at 430-540 C on an atomic-layer-deposited Al:ZnO buffer layer. The resulting nanowires were affected only by the properties of the buffer layer, allowing nanowire growth on a number of substrates that withstand $400 C. The growth occurred in two phases: initial in-plane growth and subsequent out-plane growth. The nanowires grown exhibited a strong photoluminescence signal both at room temperature and at 12 K. The 12 K photoluminescence peak was at 1.47 eV, which was attributed to Zn autodoping from the buffer layer. The crystal structure was zincblende plagued with either twin planes or diagonal defect planes, which were related to perturbations in the seed particle during the growth. The used method combines substrates with variable properties to nanowire growth on a transparent and conductive Al:ZnO buffer layer. V C 2013 AIP Publishing LLC.

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“…However, with ternary materials the situation is different. For instance Ga x In 1-x P always has 50% P atoms, but the share of Ga atoms of the total group III atoms (Ga + In), x, depends on the growth conditions [114]. The precursors for Ga (TMGa) and In (TMIn) are different, and they have different pyrolysis behavior and different diffusion lengths.…”

Section: Compositional Effectsmentioning

confidence: 99%

Doping of semiconductor nanowires

2011

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9Populärvetenskaplig sammanfattning 11List of papers 15 AbstractIn this thesis, in situ doping during growth of III-V semiconductor nanowires, primarily for photovoltaic applications, is investigated. The nanowires were grown by metalorganic vapor phase epitaxy (MOVPE), with gold seed particles. After growth the nanowires were characterized using various techniques, including photoluminescence, transmission electron microscopy and electrical measurements of contacted nanowires. Different III-V materials were studed, both binary materials such as InP and GaAs, and ternary materials such as Ga x In 1-x P. To achieve p-and n-doping, different precursors were employed.The results show that successful p-and n-doping can be achieved in many materials. The in situ doping is shown to affect the nanowire growth strongly, but differently depending on the combination of material and dopant. The main effects are related to the growth rate and the crystal structure. It is shown that the ndopant H 2 S increases the growth rate and induces wurtzite crystal structure in InP nanowires, while the p-dopant DEZn gives an unchanged growth rate with zinc blende crystal structure. En solcells förmåga att omvandla solljus till elektricitet kallas för verkningsgrad. Idag baseras de flesta solceller på grundämnet kisel, vilket är samma material som är basen för elektroniken i alla datorer. Detta material ger en medelmåttig verkningsgrad för ett medelmåttigt pris. För att göra solceller ännu mer användningsbara utvecklar många forskare och företag nya sorters solceller, som är billigare eller bättre än kiselceller. De mest effektiva solcellerna görs av så kallade III-V ("tre-fem") material, som kan ge ungefär dubbelt så mycket eleffekt som kiselceller. Tyvärr är III-V material dyra, vilket gör dessa solceller olönsamma för de flesta tillämpningar.Ett möjligt sätt att sänka kostnaderna är att göra III-V materialet i form av små, avlånga kristaller som kallas nanotrådar. Dessa nanotrådar är ungefär en tusendel så tjocka som ett hårstrå, vilket betyder att deras diameter är ungefär samma som ljusets våglängd. Mängden III-V material som används kan då minskas på två sätt. Dels kan man använda ett annat, billigare material som bärande substrat, dels behöver man bara täcka ungefär en tiondel av ytan. Nanotrådarna fungerar som små antenner som effektivt fångar in solljuset. I en solcell absorberas ljusenergin av elektroner, som tvingas i en bestämd riktning vilket skapar en elektrisk ström. För att göra detta används så kallad dopning, 13 vilket innebär att man stoppar in kontrollerade mängder av speciella föroreningar i den annars mycket rena kristallen. Med n-dopning skapar man ett överskott av elektroner, och med p-dopning skapar man ett underskott. Kombinerar man ett pdopat och ett n-dopat område får man en p-n övergång, som också kallas en diod. Det är i övergången mellan p-dopning och n-dopning som elektronerna tvingas i en speciell riktning, nämligen mot den n-dopade sidan. För att nanotrådarna ska fungera som solceller måste dä...

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Particle-assisted Ga_xIn_1−xP nanowire growth for designed bandgap structures

Cited by 50 publications

References 49 publications

Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

GaAs nanowires grown on Al-doped ZnO buffer layer

Doping of semiconductor nanowires

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