Partially coherent extreme ultraviolet interference lithography for 16nm patterning research

Goldstein, Michael; Wüest, Andrea; Barnhart, DH

doi:10.1063/1.2973178

Cited by 3 publications

(1 citation statement)

References 14 publications

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“…Currently, our analysis is limited to scalar diffraction and it is apparent that a vector-based formalism will soon be necessary for the study of smaller CDs at 13.4 nm. 26 Although EUV-IL has been in use for several years, 6 in order to reach the limits of nanopatterning, several aspects must be considered:…”

Section: Resultsmentioning

confidence: 99%

Engineering study of extreme ultraviolet interferometric lithography

Jiang

Cheng

Isoyan

et al. 2009

J. Micro/Nanolith. MEMS MOEMS

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Extreme ultraviolet interferometric lithography ͑EUV-IL͒ is a powerful nanopatterning technique, exploiting the interference of two beams of short-wavelength radiation ͑ Ϸ 13 nm͒ to form high-accuracy fringe patterns. Transmission diffraction gratings of appropriate period ͑40-100 nm͒ are used to form the beams; the substrate is located in the region of overlap to expose the photoresist material, recording 20-50 nm interference fringe patterns. Although the physics of EUV-IL is simple, its actual implementation is not and requires attention to detail in order to fully exploit the power of the technique. In order to understand the impact of realistic physical conditions on the performance of EUV-IL, we have developed a set of accurate numerical models based on the Rayleigh-Sommerfeld diffraction theory. These modeling tools are then applied to generate a complete and accurate analysis of EUV-IL, taking into account all the relevant physical processes, from finite extent of the gratings to the partial coherence of the source, and including detailed physical structure of the mask. The results are used to guide the design and implementation of EUV-IL exposure systems, down to the sub-11-nm range.

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Section: Resultsmentioning

confidence: 99%

Engineering study of extreme ultraviolet interferometric lithography

Jiang

Cheng

Isoyan

et al. 2009

J. Micro/Nanolith. MEMS MOEMS

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Optimization of a gas discharge plasma source for extreme ultraviolet interference lithography at a wavelength of 11 nm

Bergmann

Danylyuk

Juschkin

2009

Journal of Applied Physics

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In this work, we report about the optimization of the spectral emission characteristic of a gas discharge plasma source for high-resolution extreme ultraviolet (EUV) interference lithography based on achromatic Talbot self-imaging. The working parameters of the source are optimized to achieve a required narrowband emission spectrum and to fulfill the necessary coherence and intensity requirements. The intense 4f-4d transitions around 11 nm in a highly ionized (Xe8+-Xe12+) xenon plasma are chosen to provide the working wavelength. This allows us to increase the available radiation intensity in comparison with an in-band EUV xenon emission at 13.5 nm and opens up the possibility to strongly suppress the influence of the 5p-4d transitions at wavelengths between 12 and 16 nm utilizing a significant difference in conditions for optical thickness between 4f-4d and 5p-4d transitions. The effect is achieved by using the admixture of argon to the pinch plasma, which allows keeping the plasma parameters approximately constant while, at the same time, reducing the density of xenon emitters. It is demonstrated that with this approach it is possible to achieve a high intensity 11 nm EUV radiation with a bandwidth of 3%-4% without the use of multilayer mirrors or other additional spectral filters in the vicinity of the working wavelength. The achieved radiation parameters are sufficient for high-performance interference lithography based on the achromatic Talbot effect

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Extreme-ultraviolet microexposure tool at 05 NA for sub-16 nm lithography

Goldstein¹,

Hudyma

Naulleau

et al. 2008

Opt. Lett.

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The resolution limit of present 0.3 NA 13.5 nm wavelength microexposure tools is compared to next-generation lithography research requirements. Findings suggest that a successor design is needed for patterning starting at the 16 nm semiconductor process technology node. A two-mirror 0.5 NA optical design is presented, and performance expectations are established from detailed optical and lithographic simulation. We report on the results from a SEMATECH program to fabricate a projection optic with an ultimate resolution limit of approximately 11 nm.

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Partially coherent extreme ultraviolet interference lithography for 16nm patterning research

Cited by 3 publications

References 14 publications

Engineering study of extreme ultraviolet interferometric lithography

Engineering study of extreme ultraviolet interferometric lithography

Optimization of a gas discharge plasma source for extreme ultraviolet interference lithography at a wavelength of 11 nm

Extreme-ultraviolet microexposure tool at 05 NA for sub-16 nm lithography

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