Parasitic behavior of different V/III ratios on the properties of InGaN/GaN heterostructures by MOCVD technique

Tan, Aik Kwan; Hamzah, Nur Atiqah; Ahmad, M.A.; Ng, Sha Shiong; Hassan, Z.

doi:10.1016/j.jallcom.2022.168236

Cited by 4 publications

(1 citation statement)

References 41 publications

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“…Wide band gap semiconductors are crucial for various applications, such as solar cells, [1][2][3][4][5][6][7] light-emitting diodes 8,9 and transistors. 10 Although traditional wide bandgap semiconductors, such as GaN and InGaN, have been widely adopted, [11][12][13][14][15][16][17] they are expensive owing to the costly metal sources, latticematched substrates (single crystal Al 2 O 3 or SiC substrates) and complex epitaxy process. 18,19 Therefore, it is significant to develop new, low-cost and high-performance wide bandgap semiconductor materials.…”

Section: Introductionmentioning

confidence: 99%

A self-powered p-CuBr/n-Si heterojunction photodetector based on vacuum thermally evaporated high-quality CuBr films

Xia,

Zhang,

Tian

et al. 2024

J. Mater. Chem. C

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Section: Introductionmentioning

confidence: 99%

A self-powered p-CuBr/n-Si heterojunction photodetector based on vacuum thermally evaporated high-quality CuBr films

Xia,

Zhang,

Tian

et al. 2024

J. Mater. Chem. C

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Elimination of V‐Shaped Pits in Thick InGaN Layers via Ammonia‐Assisted Face‐to‐Face Annealing

Nakata,

Sasaki,

Kurai

et al. 2024

Physica Status Solidi (a)

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InGaN, a group‐III nitride semiconductor, is expected to be widely used in the field of optoelectronics, owing to its excellent physical properties. However, InGaN has various limitations. This study reports face‐to‐face annealing (FFA) using vapor‐phase and in‐plane mass transport to improve the surface flatness of an InGaN template. InGaN layers are grown on a GaN template that is grown on a c‐plane sapphire substrate using metal–organic vapor‐phase epitaxy. NH3‐assisted FFA is performed at 1050 °C for 20 min, causing V‐pits to vanish from the InGaN template despite their initial density of 3.3 × 108 cm−2. The surface condition of the lower InGaN layer is worse than that of the upper InGaN layer due to the FFA‐induced upward mass transport from the lower layer, thereby eliminating the V‐pits. Compositional analysis of the upper layer through Auger electron spectroscopy and energy‐dispersive X‐ray spectroscopy reveals In peaks despite high‐temperature annealing, thus confirming the presence of InGaN. The results of this study offer possibilities for future InGaN crystal growth and InGaN‐based device fabrication.

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Recent progress of indium-bearing group-III nitrides and devices: a review

He,

Li,

Xiao

et al. 2024

Opt Quant Electron

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Parasitic behavior of different V/III ratios on the properties of InGaN/GaN heterostructures by MOCVD technique

Cited by 4 publications

References 41 publications

A self-powered p-CuBr/n-Si heterojunction photodetector based on vacuum thermally evaporated high-quality CuBr films

A self-powered p-CuBr/n-Si heterojunction photodetector based on vacuum thermally evaporated high-quality CuBr films

Elimination of V‐Shaped Pits in Thick InGaN Layers via Ammonia‐Assisted Face‐to‐Face Annealing

Recent progress of indium-bearing group-III nitrides and devices: a review

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