A self-powered p-CuBr/n-Si heterojunction photodetector based on vacuum thermally evaporated high-quality CuBr films

Xia, Bin; Zhang, Lichun; Tian, Dan; He, Shunli; Cao, Ning; Xie, Guanying; Zhang, Dengying; Chu, Xinbo; Zhao, Fengzhou

doi:10.1039/d3tc03516f

J. Mater. Chem. C

2024

DOI: 10.1039/d3tc03516f

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A self-powered p-CuBr/n-Si heterojunction photodetector based on vacuum thermally evaporated high-quality CuBr films

Bin Xia,

Lichun Zhang,

Dan Tian

et al.

Abstract: Violet heterojunction photodetectors based on p-CuBr/n-Si are prepared by the vacuum thermal evaporation technique. The photodetectors have a sensitive violet response with self-powered characteristics and excellent imaging capability.

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Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGa₂O₄ heterojunction with high sensitivity and fast speed

Cao,

Zhang,

et al. 2024

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Self-powered deep ultraviolet photodetectors (DUV PDs) are essential in environmental monitoring, flame detection, missile guidance, aerospace, and other fields. A heterojunction photodetector based on p-CuI/n-ZnGa2O4 has been fabricated by pulsed laser deposition combined with vacuum thermal evaporation. Under 260 nm DUV light irradiation, the photodetector exhibits apparent self-powered performance with a maximum responsivity and specific detectivity of 2.75 mA/W and 1.10 × 1011 Jones at 0 V. The photodetector exhibits high repeatability and stability under 260 nm periodic illumination. The response and recovery time are 205 ms and 133 ms, respectively. This work provides an effective strategy for fabricating high-performance self-powered DUV photodetectors.

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Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGa₂O₄ heterojunction with high sensitivity and fast speed

Cao,

Zhang,

et al. 2024

Opt. Express

View full text Add to dashboard Cite

show abstract

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A self-powered p-CuBr/n-Si heterojunction photodetector based on vacuum thermally evaporated high-quality CuBr films

Abstract: Violet heterojunction photodetectors based on p-CuBr/n-Si are prepared by the vacuum thermal evaporation technique. The photodetectors have a sensitive violet response with self-powered characteristics and excellent imaging capability.

Cited by 1 publication

References 55 publications

Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGa₂O₄ heterojunction with high sensitivity and fast speed

Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGa₂O₄ heterojunction with high sensitivity and fast speed

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A self-powered p-CuBr/n-Si heterojunction photodetector based on vacuum thermally evaporated high-quality CuBr films

Abstract: Violet heterojunction photodetectors based on p-CuBr/n-Si are prepared by the vacuum thermal evaporation technique. The photodetectors have a sensitive violet response with self-powered characteristics and excellent imaging capability.

Cited by 1 publication

References 55 publications

Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGa2O4 heterojunction with high sensitivity and fast speed

Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGa2O4 heterojunction with high sensitivity and fast speed

Contact Info

Product

Resources

About

Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGa₂O₄ heterojunction with high sensitivity and fast speed

Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGa₂O₄ heterojunction with high sensitivity and fast speed