Parameters required to simulate electric characteristics of SiC devices for n-type 4H–SiC

Abstract

Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p -type 4H-SiC epilayersIn order to obtain some of the parameters required to simulate the electric characteristics of silicon carbide (SiC) power electronic devices in a wide temperature range from startup temperatures ͑ഛ30°C͒ to steady-operation temperatures ͑ജ200°C͒, we discuss the dependence of the two donor levels on the total donor density ͑N D ͒ as well as the dependence of the electron mobility on the total impurity density ͑N imp ͒ and operating temperature ͑T͒ in the n-type 4H-SiC. The temperature-dependent electron concentration n͑T͒ and electron mobility n ͑T͒ in the n-type 4H-SiC epilayers with several nitrogen-doping densities are obtained from the Hall-effect measurements. By the graphical peak analysis method (free carrier concentration spectroscopy: FCCS) without any assumptions regarding the donor species, the two types of donor species are detected from n͑T͒. Moreover, the energy level and density of each donor species are determined by the FCCS. Using these results, we obtain the parameters with which the dependence of each donor level on N D can be simulated. Using n ͑T͒ at T Ͼ 250 K, moreover, we obtain the parameters with which the dependence of the electron mobility on N imp and T can be simulated.

Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

“…The 10 mm 2 large area detectors demonstrated an impressive energy resolution of 1.8% for 5486 keV alpha particles at an optimized operating reverse bias of 130 V. Silicon carbide (SiC) is a promising semiconductor material due to its wide bandgap, and high thermal conductivity, breakdown electrical field, saturation electron drift velocity, radiation resistance, and excellent physical and chemical stability. [1][2][3][4][5][6] Availability of detector grade single crystalline bulk SiC is limited by the existing crystal growth techniques that introduce macroscopic as well as microscopic crystallographic defects during the growth process. 7 Recently, SiC based high resolution semiconductor detectors for ionizing radiations have attracted attention due to the availability of high-resistive, highly crystalline epitaxial layers with extremely low micropipe defect content (<1 cm…”

Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations

“…[11][12][13][14] For designing high-performance SiC devices or integrated circuits, the temperature dependence of electrical properties in SiC, such as mobility, carrier concentration, and resistivity, is of importance. The physical properties of n-type SiC have extensively been investigated so far, [15][16][17][18][19] and those of p-type SiC have also been obtained recently. [20][21][22][23][24][25][26] In our studies, the temperature dependences of hole mobility, hole concentration, and Hall scattering factor were shown by performing Hall-effect measurement on thick p-type SiC epilayers with various doping concentrations.…”

Effect of Deep-Level Defects on Transient Photoconductivity of Semi-Insulating 4H-SiC

“…The values of µ n and µ p at various temperatures within the range of 200600 K are calculated using the relations [15]:…”