Parameters Affecting the Electron Beam Sensitivity of Poly(methyl methacrylate)

Gipstein, Edward; Ouano, A. C.; Johnson, Dale E.; Need, Omar U.

doi:10.1147/rd.212.0143

Cited by 38 publications

(21 citation statements)

References 19 publications

(21 reference statements)

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“…The relationship between these two quantities can be expressed empirically by Sϭk(1/M s ) Ϫ␤ , where k and ␤ are constants. [25][26][27][28] As seen in the figure, the relationship can be represented by two straight lines with different slopes for the alkyl-acetate solvents. The exponent ␤ jumped from about 6 to about 14 between ethyl-and propyl-acetate.…”

Section: A Effect Of Molecular Size Of Developer Solvent On Dissolutmentioning

confidence: 99%

Effect of developer molecular size on roughness of dissolution front in electron-beam resist

Yamaguchi

Namatsu

2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inCorrelation of lithographic performance of the electron beam resists SML and ZEP with their chemical structure Selective profile transformation of electron-beam exposed multilevel resist structures based on a molecular weight dependent thermal reflow J. Vac. Sci. Technol. B 29, 06F302 (2011); 10.1116/1.3634013Influence of molecular weight of resist polymers on surface roughness and line-edge roughness

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Section: A Effect Of Molecular Size Of Developer Solvent On Dissolutmentioning

confidence: 99%

Effect of developer molecular size on roughness of dissolution front in electron-beam resist

Yamaguchi

Namatsu

2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…With the known scission probability W͑x , y , z͒ the mean number of monomers in chain fragments, n͑x , y , z͒, is given by 1,15,42 n͑x,y,z͒ = n 0 1 + n 0 W͑x,y,z͒ , ͑19͒…”

Section: E 3d Distribution Of the Scission Probability And Fragmentamentioning

confidence: 99%

Simulation of the spatial distribution and molecular weight of polymethylmethacrylate fragments in electron beam lithography exposures

Aktary¹,

Stepanova²,

Dew³

2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We report a three-dimensional (3D) simulation model based on the kinetic transport theory for calculating the distribution of PMMA fragments after an exposure to electron impact. The conditions employed for the modeling were chosen to resemble a typical electron beam lithography exposure. The model accounts for inelastic collisions of electrons in PMMA and resulting random main-chain scissions. We have considered gratings composed of parallel lines distanced by 10–50nm and exposed to electrons with energies of 10–60keV. By the model simulations, we have generated and analyzed the detailed 3D distributions of small PMMA fragments (one to ten monomers) that are soluble at the development stage and thus are responsible for the clearance in the gratings. In terms of the spatial distributions of soluble fragments, we have formulated the criteria that define the total clearance as well as the local grating development and investigated their dependence on the grating period, electron dose, and energy.

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“…Nonmethacrylate polymers exist beyond the dotted lines. Figures 6,7,and 8 show the relations between inverse number-average molecular weight and y-radiation dosage for positive resists. Polymers of halogenated methacrylate such as PClSEtMA, PF,EtMA, and PClBPhMA gave relatively large deviations from the linear relationships of lmn vs. radiation dosage.…”

Section: Contribution Of Sputtering Effect On Resist Durabilitymentioning

confidence: 99%

Dry etching durability of positive electron resists

Harada

1981

J of Applied Polymer Sci

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SynopsisThe effects of positive electron resist structures and G values for scission on dry etching durability have been studied with regard to plasma etching, reactive sputter etching, and plasma ashing.Polymers of aromatic methacrylates, especially poly(a-methylstyrene), all of which contain a benzene ring in the side chain, exhibit superior durability for each etching system. On the other hand, polymers of fluorinated and chlorinated methacrylates show low durability compared with the nonsubstituted polymethacrylates. In addition, they vary in durability with respect to the etching gas used. The sputtering effect which is induced by ion bombardment in flat bed-type reactors produces a significant loss in thickness of positive resists. Rough correlations between dry etching rates and Gs(scission) as the indication of sensitivity were obtained. The large dispersion of the correlaticns implies the possibility of more useful positive electron resists of high durability and high sensitivity.

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Parameters Affecting the Electron Beam Sensitivity of Poly(methyl methacrylate)

Cited by 38 publications

References 19 publications

Effect of developer molecular size on roughness of dissolution front in electron-beam resist

Effect of developer molecular size on roughness of dissolution front in electron-beam resist

Simulation of the spatial distribution and molecular weight of polymethylmethacrylate fragments in electron beam lithography exposures

Dry etching durability of positive electron resists

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