Effect of developer molecular size on roughness of dissolution front in electron-beam resist

Yamaguchi, Toru; Namatsu, Hideo

doi:10.1116/1.1736647

Cited by 34 publications

(21 citation statements)

References 33 publications

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“…In future work we will look more closely into the variation of development conditions as those are known to have a significant impact on the resolution, too. [24][25][26] …”

Section: B Resolutionmentioning

confidence: 98%

Towards a novel positive tone resist mr-PosEBR for high resolution electron-beam lithography

Pfirrmann

Voigt

Kolander

et al. 2016

Microelectronic Engineering

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“…In future work we will look more closely into the variation of development conditions as those are known to have a significant impact on the resolution, too. [24][25][26] …”

Section: B Resolutionmentioning

confidence: 98%

Towards a novel positive tone resist mr-PosEBR for high resolution electron-beam lithography

Pfirrmann

Voigt

Kolander

et al. 2016

Microelectronic Engineering

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“…It has been generally accepted that LER correlates with the quality of aerial images. 13 Also, the effect of development process has been demonstrated by changing development time, 3 temperature, the strength 3 and molecular size of solvents, 14 and the condition of polymer phase separation. The relation between the aerial image contrast and LER has been comprehensively investigated.…”

Section: Introductionmentioning

confidence: 99%

Proton and anion distribution and line edge roughness of chemically amplified electron beam resist

Kozawa

Yamamoto

Saeki

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Nanoscale resist topography such as line edge roughness ͑LER͒ or line width roughness ͑LWR͒ is the most serious concern in sub-100 nm fabrication. Many factors have been reported to affect LER. However, the cause of LER is still unclear. We calculated proton and anion distribution of chemically amplified electron beam resists in order to make clear the cause of LER. Counter anion distribution is significantly different from proton distribution. Counter anions are inhomogeneously distributed outside a relatively smooth edge of proton distribution. This is caused by the fact that acid generators can react with low-energy ͑ϳ0 eV͒ electrons. The inhomodeneous distribution of counter anions outside proton distribution is considered to contribute to LER formation in chemically amplified resists for post optical lithographies.

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“…9,13,15,16 For certain resists, this approach works reasonably well for a resolution down to the 100 nm level and lower. However, reaching sub-100-nm resolution regimes, which is increasingly often addressed in the literature, [18][19][20][21][22][23][24] requires a more detailed insight into the processes of molecular fragmentation during exposure. 21,[23][24][25][26] Of particular importance is the overall amount and spatial distribution of small fragments of PMMA molecules that are soluble at the development stage and thus are responsible for the efficiency and resolution of the exposure.…”

Section: Introductionmentioning

confidence: 99%

Simulation of the spatial distribution and molecular weight of polymethylmethacrylate fragments in electron beam lithography exposures

Aktary¹,

Stepanova²,

Dew³

2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We report a three-dimensional (3D) simulation model based on the kinetic transport theory for calculating the distribution of PMMA fragments after an exposure to electron impact. The conditions employed for the modeling were chosen to resemble a typical electron beam lithography exposure. The model accounts for inelastic collisions of electrons in PMMA and resulting random main-chain scissions. We have considered gratings composed of parallel lines distanced by 10–50nm and exposed to electrons with energies of 10–60keV. By the model simulations, we have generated and analyzed the detailed 3D distributions of small PMMA fragments (one to ten monomers) that are soluble at the development stage and thus are responsible for the clearance in the gratings. In terms of the spatial distributions of soluble fragments, we have formulated the criteria that define the total clearance as well as the local grating development and investigated their dependence on the grating period, electron dose, and energy.

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Effect of developer molecular size on roughness of dissolution front in electron-beam resist

Cited by 34 publications

References 33 publications

Towards a novel positive tone resist mr-PosEBR for high resolution electron-beam lithography

Towards a novel positive tone resist mr-PosEBR for high resolution electron-beam lithography

Proton and anion distribution and line edge roughness of chemically amplified electron beam resist

Simulation of the spatial distribution and molecular weight of polymethylmethacrylate fragments in electron beam lithography exposures

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