Parameter extraction for a physics-based circuit simulator IGBT model

Kang, Xiaosong; Santi, Enrico; Hudgins, J.L.; Palmer, P.R.; Donlon, J.F.

doi:10.1109/apec.2003.1179330

Cited by 53 publications

(17 citation statements)

References 9 publications

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“…Tables II to V list starting conditions and optimum values found for DC and transient optimisation for both IGBTs. TABLE II Note that although procedure can be easily modified to take into account buffer layer parameters, they were not optimised and were set base on their empirical value range, since they do not have a significant effect on model accuracy [11].…”

Section: B Optimisation Resultsmentioning

confidence: 99%

A FEM punch-through IGBT model using an efficient parameter extraction method

Chibante

Araújo

Carvalho

2005

31st Annual Conference of IEEE Industrial Electronics Society, 2005. IECON 2005.

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-A Finite Element physics-based punch-throughIGBT model is presented. The model's core is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs. The approach enables an easy implementation into a standard circuit simulator SPICE by means of an electrical analogy with the resulting system of ODEs, solved as a set of current controlled RC nets that describes charge carrier distribution in low-doped zone. The issue of parameter extraction for physics-based IGBT models is also addressed. An optimisation-based algorithm enabling an efficient parameter extraction method for IGBT model is discussed. Model is validated comparing experimental and simulated results.

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Section: B Optimisation Resultsmentioning

confidence: 99%

A FEM punch-through IGBT model using an efficient parameter extraction method

Chibante

Araújo

Carvalho

2005

31st Annual Conference of IEEE Industrial Electronics Society, 2005. IECON 2005.

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“…Of course that as closer the initial estimate is from the global optimum the faster will be the optimization process. The approach proposed in (Chibante et (Chibante et al, 2004;Kang et al, 2003c;Leturcq et al, 1997) to find an interesting initial solution for some of the parameters. These simple techniques are mainly based in datasheet information or known relations between parameters.…”

Section: Initial Populationmentioning

confidence: 99%

“…This issue is particularly relevant for IGBTs because they are characterized by a large number of parameters. Since IGBT models developed in recent years lack an identification procedure, different recent papers in literature address this issue (Allard et al, 2003;Claudio et al, 2002;Hefner & Bouche, 2000;Kang et al, 2003c;Lauritzen et al, 2001). Different approaches have been taken, most of them cumbersome to be solved since they are very complex and require so precise measurements that are not useful for usual needs of simulation.…”

Section: Introductionmentioning

confidence: 99%

“…It is nowadays recognized that an identification procedure is crucial in order to design power circuits easily through simulation (Allard et al, 2003;Claudio et al, 2002;Kang et al, 2003c;Lauritzen et al, 2001). Complex or inaccurate parameterization often discourages design engineers from attempting to use physics-based semiconductor models in their circuit designs.…”

Section: Introductionmentioning

confidence: 99%

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Parameter Identification of Power Semiconductor Device Models Using Metaheuristics

Chibante¹,

Araújo²,

Carvalho³

2010

Simulated Annealing, Theory With Applications

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“…The parameters characterizing a switching property are extracted by using the method described in the literatures (9) (13) . …”

Section: Appendixmentioning

confidence: 99%

Short-Circuit Protection Method Based on a Gate Charge Characteristic

et al. 2015

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This paper describes a high-speed protection circuit against a hard-switching fault (HSF) and a fault under load (FUL). The demand for high-speed protection circuits for insulated-gate bipolar transistors (IGBTs) subjected to an HSF increases with increasing power density of power semiconductor devices. The reverse transfer capacitance of an IGBT depends on the collector-emitter voltage, such that it produces a significant effect on the switching behavior under HSF conditions as well as under normal conditions. Accordingly, a significant difference appears in the gate charge characteristics between under HSF conditions and under normal turn-on conditions. Hence, an HSF can be detected by monitoring the gate-emitter voltage and the amount of gate charge. IGBTs can be rapidly protected from destruction because no blanking time is required. An FUL can be also detected by the same protection procedure because a gate charge characteristic under FUL conditions also differs from that under normal turn-on conditions. Simulated and experimental results verify the validity of the novel protection circuit based on a gate charge characteristic.

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Parameter extraction for a physics-based circuit simulator IGBT model

Cited by 53 publications

References 9 publications

A FEM punch-through IGBT model using an efficient parameter extraction method

A FEM punch-through IGBT model using an efficient parameter extraction method

Parameter Identification of Power Semiconductor Device Models Using Metaheuristics

Short-Circuit Protection Method Based on a Gate Charge Characteristic

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