Parameter and Reactor Dependence of Selective Oxide RIE in  CF 4 +  H 2

Ephrath, L. M.; Petrillo, E.J.

doi:10.1149/1.2123494

Cited by 65 publications

(23 citation statements)

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“…236)], C 2 F 6 (Freon 116), and C 3 F 8 (Freon 218) were used in the early days to etch SiO 2 , 28,29 usually with addition of O 2 when selectivities to resist and/or silicon were not critical, and polymer control was important. Hydrogen addition to the above fluorocarbons was used to increase selectivity to silicon, 28,29,237 with the drawbacks of polymer formation, decreased etch rate, 237,238 and deep penetration of hydrogen into the silicon substrate [239][240][241][242][243][244][245][246][247] that can lead to device degradation if not annealed properly. In applications where this is not an issue (such as patterning of waveguides), hydrogen may be used as an additive to control selectivity to silicon and/or photoresists.…”

Section: Dielectricsmentioning

confidence: 99%

Plasma etching: Yesterday, today, and tomorrow

Donnelly¹,

Kornblit²

2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

648

422

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The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly,the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon,silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

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Section: Dielectricsmentioning

confidence: 99%

Plasma etching: Yesterday, today, and tomorrow

Donnelly¹,

Kornblit²

2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

648

422

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“…Beside ion enhanced transport of fluorine through the CF x layer ͑previous case͒, it is also possible that the ratio ⌫ CF x /c 0 ͱD is decreasing as a function of the self-bias voltage due to ion impact fragmentation and dissociation of the CF x surface molecules. 36,37 In order for these surface processes to be a source of fluorine, the carbon must be more likely to desorb from the CF x surface than the fluorine at higher self-bias voltages, i.e., the desorbing stoichiometry depends on the self-bias voltage. In this case we keep the transport parameters and D constant and we assume that c 0 and ⌫ CF x are functions of the self-bias voltage.…”

Section: Ion Impact Fragmentation and Film Dissociationmentioning

confidence: 99%

High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer

Standaert

Schaepkens

Rueger

et al. 1998

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

234

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. For various fluorocarbon processing chemistries in an inductively coupled plasma reactor, we have observed relatively thick ͑2-7 nm͒ fluorocarbon layers that exist on the surface during steady state etching of silicon. In steady state, the etch rate and the surface modifications of silicon do not change as a function of time. The surface modifications were characterized by in situ ellipsometry and x-ray photoelectron spectroscopy. The contribution of direct ion impact on the silicon substrate to the etching mechanism is reduced with increasing fluorocarbon layer thickness. Therefore, we consider that the silicon etch rate is controlled by a neutral etchant flux through the layer. Our experimental data show, however, that ions play an import role in the transport of silicon etching precursors through the layer. A model is developed that describes the etch kinetics through a fluorocarbon layer based on a fluorine diffusion transport mechanism. The model is consistent with the data when one or two of the following roles of the ions on the etching process are assumed. The first role is an enhancement in the diffusivity of fluorine atoms through the fluorocarbon layer and an enhancement in the reaction probability of fluorine in the fluorocarbon layer. In this case the fluorine is assumed to originate from the gas phase. The second role includes ion fragmentation and dissociation of the fluorocarbon surface molecules.

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“…Manuscript submitted April 25, 1988; revised manuscript received Nov. 17,1988. This was Paper 548 presented at the San Diego, CA, Meeting of the Society, Oct. [19][20][21][22][23][24]1986.…”

Section: Discussionmentioning

confidence: 99%

Coupled On/Off‐Buried Layer Modeling of Growth Rate Dependence of Arsenic Autodoping Profiles in Silicon

Murley

Srinivasan

1989

J. Electrochem. Soc.

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A detailed phenomenological model is presented for the growth rate dependence of arsenic autodoping profiles in silicon. The model was inferred from numerical simulation of arsenic diffusion during epi prebake and growth stages. Simultaneously simulated were a region with a buried layer and a separate region with no buried layer. The model employs a two-state adsorbed layer on the silicon surface and a set of kinetic coefficients which enable the modeling of measured lateral peak concentrations, doses, and epi gradients. The model has been implemented in a pseudo two-dimensional modification of the SUPREM program.

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Parameter and Reactor Dependence of Selective Oxide RIE in CF 4 + H 2

Cited by 65 publications

References 1 publication

Plasma etching: Yesterday, today, and tomorrow

Plasma etching: Yesterday, today, and tomorrow

High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer

Coupled On/Off‐Buried Layer Modeling of Growth Rate Dependence of Arsenic Autodoping Profiles in Silicon

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