Paramagnetic Resonance in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>N</mml:mi></mml:math>- and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>P</mml:mi></mml:math>-Type Silicon

Willenbrock, F. K.; Bloembergen, N.

doi:10.1103/physrev.91.1281.2

Cited by 10 publications

(2 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The first measurement of T 1 of free carriers in a semiconductor was reported in Si by Portis et al [19] and Willenbrock and Bloembergen [20]; these measurements were done by conduction electron spin resonance. Silicon, however, remains still very poorly understood in regards to its spin transport properties.…”

Section: Semiconductorsmentioning

confidence: 99%

Spin relaxation of conduction electrons

Fabian¹,

Sarma²

1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

164

130

View full text Add to dashboard Cite

Prospect of building electronic devices in which electron spins store and transport information has revived interest in the spin relaxation of conduction electrons. Since spin-polarized currents cannot flow indefinitely, basic spin-electronic devices must be smaller than the distance electrons diffuse without losing its spin memory. Some recent experimental and theoretical effort has been devoted to the issue of modulating the spin relaxation. It has been shown, for example, that in certain materials doping, alloying, or changing dimensionality can reduce or enhance the spin relaxation by several orders of magnitude. This brief review presents these efforts in the perspective of the current understanding of the spin relaxation of conduction electrons in nonmagnetic semiconductors and metals.Comment: Invited paper at the International Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI), San Diego (January, 1999); to be published in Journal of Vacuum Science and Technology

show abstract

Section: Semiconductorsmentioning

confidence: 99%