Paramagnetic defects in silicon/silicon dioxide systems

Caplan, P. J.; Helbert, John N.; Wagner, Burkhard E.; Poindexter, Edward H.

doi:10.1016/0039-6028(76)90085-6

Cited by 56 publications

(16 citation statements)

References 14 publications

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“…However, the EPR measurement was performed at a relatively low frequency (35 GHz) which imposes a limitation on the detection of several paramagnetic spin species. The paramagnetic defects in silicon are characterized by similar gtensor values 30,36 and hence are difficult to disentangle at Q-band frequencies. Possible enhancement in a spectral resolution could be obtained by taking the measurement at higher field/frequency.…”

Section: Discussionmentioning

confidence: 99%

“…The relaxation rate of a paramagnetic centre is closely linked to its structural environment. In a diluted lattice of spin-0 nuclei (both 28 Si and 30 Si are spin-0 while 29 Si contributes to 4.7% of the isotopic abundance), the average hyperfine interaction with the neighboring nuclear spins is likely to be of a similar magnitude to the electron-electron dipolar coupling between two adjacent surface defects 49 . As such, the geometry of the surface defects is an important factor determining their relaxation properties.…”

Section: Discussionmentioning

confidence: 99%

“…The paramagnetic centres in crystalline silicon can be created in several ways 28,29 , including surface oxidation, applying mechanical stress, electrical discharge, exposure to ionizing radiation or doping with metal ions. In particular, the surface defects 30 , which arises due to crystalline lattice mismatch between the elemental silicon core and its oxidized (SiO2) top layer have been used for DNP since the first reports of hyperpolarization of silicon 31 . Surface paramagnetic centres can be used to polarize nuclei located at the surface 32 or within the dispersing solvent 33,34 .…”

Section: Hyperpolarization Of 29 Si Nucleimentioning

confidence: 99%

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Direct hyperpolarization of micro- and nanodiamonds for bioimaging applications – Considerations on particle size, functionalization and polarization loss

Kwiatkowski

Jähnig

Steinhauser

et al. 2018

Journal of Magnetic Resonance

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Due to the inherently long relaxation time of C spins in diamond, the nuclear polarization enhancement obtained with dynamic nuclear polarization can be preserved for a time on the order of about one hour, opening up an opportunity to use diamonds as a new class of long-lived contrast agents. The present communication explores the feasibility of usingC spins in directly hyperpolarized diamonds for MR imaging including considerations for potential in vivo applications.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Hyperpolarization Of 29 Si Nucleimentioning

confidence: 99%

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Direct hyperpolarization of micro- and nanodiamonds for bioimaging applications – Considerations on particle size, functionalization and polarization loss

Kwiatkowski

Jähnig

Steinhauser

et al. 2018

Journal of Magnetic Resonance

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“…[17][18][19] It is identified as a silicon atom with a dangling bond [Si (3)]. 15,[20][21][22] The presence of this defect is easily identified with the EPR spectroscopy.…”

mentioning

confidence: 99%

Structure, defects, and strain in silicon-silicon oxide interfaces

Kovačević¹,

Pivac²

2014

Journal of Applied Physics

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ABSTRACT:The structure of the interfaces between silicon and silicon-oxide are responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to theirs failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom or displaced oxygen atom. Three-coordinated oxygen atom can be 2 created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (Pb defect) depend on the charge as well as on the electric field across the interface. The negatively charged Pb defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. Mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab-initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

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“…b ' ~c (18) in the silicon bulk due to neutral iron (19); and damage sites in both silicon bulk arid oxide , such as occur with neon and oxygen (20) …”

Section: Co (mentioning

confidence: 99%

Structural and Electrical Investigation of the Si-SiO2 Interface in Thermally Oxidized Silicon.

Deal¹,

Razouk²

1979

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Paramagnetic defects in silicon/silicon dioxide systems

Cited by 56 publications

References 14 publications

Direct hyperpolarization of micro- and nanodiamonds for bioimaging applications – Considerations on particle size, functionalization and polarization loss

Direct hyperpolarization of micro- and nanodiamonds for bioimaging applications – Considerations on particle size, functionalization and polarization loss

Structure, defects, and strain in silicon-silicon oxide interfaces

Structural and Electrical Investigation of the Si-SiO2 Interface in Thermally Oxidized Silicon.

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