Palladium Diffusion Transport in n-Type GaAs

Yeh, Der-Hwa; Hsieh, Li-Zen; Chang, Liann‐Be; Jeng, Ming–Jer; Kuei, Ping-Yu

doi:10.1143/jjap.46.968

Cited by 5 publications

(3 citation statements)

References 13 publications

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“…Reasons for this include the change from a 1-step rapid thermal anneal process used in recent literature 10,11 to a 2-step rapid thermal anneal process and the exploration of Pd/Si ratios in the contact structure. The formation of the Pd-rich quaternary phase is a low activation energy process due to its observed formation as deposited, with the Pd diffusion activation energy in GaAs of only 0.35 eV calculated by Yeh et al 28 Pd 2 Si formation is a higher activation energy process, calculated as 0.9 eV by Cheung et al 29 Because of this situation, the 2-step anneal process should promote each step in series rather than in parallel as with a 1-step anneal process. While previous work has estimated introduced N D in GaAs to be near 2:0 Â 10 19 cm À3 , 8,30 reports on InGaAs that extract levels of doping are not widely available to compare to our results.…”

Section: Resultsmentioning

confidence: 99%

Ultra low-resistance palladium silicide Ohmic contacts to lightly doped n-InGaAs

Yearsley

Lin

Hwang

et al. 2012

Journal of Applied Physics

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The formation of shallow, ultra-low resistance, Pd/Si solid-phase regrowth (SPR) ohmic contacts to n À In 0:53 Ga 0:47 As epilayers of N D ¼ 1 Â 10 17 cm À3 and N D ¼ 3 Â 10 19 cm À3 is demonstrated. The resulting specific contact resistances of 9 Â 10 À8 X cm 2 and 1:8 Â 10 À8 X cm 2 , respectively, are the lowest demonstrated for SPR contacts to n-InGaAs. An optimum Pd/Si atomic ratio of 1.5 is found to be essential to achieving low specific contact resistance. A low-temperature, two-step, rapid thermal annealing process has been employed to activate the InGaAs regrowth process and consistently achieve shallow contacts with minimal lateral diffusion. Transmission electron microscopy is used to substantiate the SPR mechanism of contact formation. For lightly doped epilayers, I-V-T measurements from 77-300 K show that the ohmic behavior is a direct result of the SPR process due to the introduction of excess Si dopant greater than 10 19 cm À3 at the regrown InGaAs interface. V

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Section: Resultsmentioning

confidence: 99%

Ultra low-resistance palladium silicide Ohmic contacts to lightly doped n-InGaAs

Yearsley

Lin

Hwang

et al. 2012

Journal of Applied Physics

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“…E d can then be obtained from the slope of the semilogarithm plot of the diffusion coefficient versus the reciprocal temperature. For experience,24 the L D was determined and the temperaturedependent diffusion coefficients ͑D͒ of Pt can then be calculated by the equation L D = ͱ Dt from a different diffusion time. From the results, we derived and fitted the temperaturedependent diffusion coefficients of Pt in the GaAs samples as…”

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confidence: 99%

Comparative analysis of platinum diffusion parameters in GaAs and GaN semiconductors

Hsieh

Yeh

2007

Journal of Applied Physics

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The phenomena of platinum ͑Pt͒ atoms diffused thermally into n-type GaAs and GaN compound semiconductors have been unveiled. Although the diffusion of Pt into silicon as a carrier lifetime reducer and leakage current minimizer has already been detailed, Pt diffusion into III-V semiconductor has remained unknown. In this study, Pt was surface coated and thermally diffused into ͑driven-in͒ GaAs and GaN samples under the temperature range of 500-900°C. The corresponding diffusion constants and diffusion energies were then determined. Different luminescence spectra were observed and analyzed. Among diffused samples, Pt was found to be a shallow donor in GaN semiconductor, but alternatively found as a deep acceptor for Pt-diffused GaAs samples.

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“…The degree of Fe diffusion was affected by the buffer layer annealing conditions. It was found that the Fe diffusion coefficient varied with the buffer layer annealing temperature and it was around 6, 6.4 and 9.02 × 10 −16 cm 2 s −1 with ±1% error for RT, 500 and 800 • C samples [28]. Compared with the RT and 500 • C samples (see diffusion profiles in figure 5), more Fe was located on the top of the 800 • C sample and its diffusion inside the barrier layer was restricted.…”

Section: Resultsmentioning

confidence: 97%

The effect of barrier layer-mediated catalytic deactivation in vertically aligned carbon nanotube growth

Patole¹,

Yu²,

Shin³

et al. 2010

J. Phys. D: Appl. Phys.

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The effect of Al-barrier layer-mediated Fe-catalytic deactivation in vertically aligned carbon nanotube (CNT) growth was studied. The substrate surface morphology, catalytic diffusion and barrier layer oxidation were found to be dependent on the annealing temperature of the barrier layer, which ultimately affects CNT growth. The annealed barrier layer without complete oxidation was found to be suitable for top to bottom super aligned CNT arrays. The highest average CNT growth rate of up to 3.88 µm s −1 was observed using this simple approach. Details of the analysis are also presented.

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Palladium Diffusion Transport in n-Type GaAs

Cited by 5 publications

References 13 publications

Ultra low-resistance palladium silicide Ohmic contacts to lightly doped n-InGaAs

Ultra low-resistance palladium silicide Ohmic contacts to lightly doped n-InGaAs

Comparative analysis of platinum diffusion parameters in GaAs and GaN semiconductors

The effect of barrier layer-mediated catalytic deactivation in vertically aligned carbon nanotube growth

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