Paired electron motion in interacting chains of quantum dots

Szafran, B.

doi:10.1103/physrevb.101.075306

Cited by 12 publications

(4 citation statements)

References 29 publications

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“…Having the same initial conditions as in the simulation from subfigure (a), one observes synchronous oscillations of dot occupation probabilities in subfigure (b), implying that electrons are coupled and move synchronously between the edge dots. Similar effects of synchronized motion in QD arrays have been reported in [51]. Finally, the case shown in subfigure (c) illustrates a different type of initial conditions when electrons start in the opposite dots in lines α and β and oscillate in 'anti-phase' due to the electrostatic repelling force between them.…”

Section: B a More Complex Case Studysupporting

confidence: 70%

Towards the Co-Simulation of Charge Qubits: A Methodology Grounding on an Equivalent Circuit Representation

Blokhina

Sokolov

Giounanlis³

et al. 2021

IEEE Open J. Circuits Syst.

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Section: B a More Complex Case Studysupporting

confidence: 70%

Towards the Co-Simulation of Charge Qubits: A Methodology Grounding on an Equivalent Circuit Representation

Blokhina

Sokolov

Giounanlis³

et al. 2021

IEEE Open J. Circuits Syst.

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“…The presented fundamental approach is useful in enhancement of tight-binding scheme as used in the design of quantum gates [28], [16], [23], [26]. The presented work is the extension of methodology given by [14] as well as by [9], [16], [18]. The results obtained in Fig.…”

Section: Discussionmentioning

confidence: 99%

“…We go beyond approach describing two straight interacting single-electron lines [18], [16], [28]. We consider the set of open curvy quasi-one dimensional loops (that can be straight or curved smooth semiconductor nanowires with single electron) described by x(s),y(s) and z(s), where s is the distance from beginning to the end of loop.…”

Section: Case Of Deformed Curvy Wannier Qubitmentioning

confidence: 99%

Electrostatically interacting Wannier qubits in curved space

Pomorski¹

2021

Preprint

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Derivation of tight-binding model from Schrödinger formalism for various topologies of position-based semiconductor qubits is presented in this work in case of static and time-dependent electric fields. Simplistic tight-binding model allows for description of single-electron devices at large integration scale. The case of two electrostatically Wannier qubits (that are also known as position based qubits) in Schrödinger model is presented with omission spin degrees of freedom. The concept of programmable quantum matter can be implemented in the chain of coupled semiconductor quantum dots. Indeed highly integrated and developed cryogenic CMOS nanostructures can be mapped to coupled quantum dots, whose connectivity can be controlled by voltage applied across transistor gates as well as external magnetic field. Using anti-correlation principle arising from Coulomb repulsion interaction between electrons one can implement classical and quantum inverter (Classical/Quantum Swap gate) and many other logical gates. This anti-correlation will be weaken due to the fact of quantumness of physical process is bringing coexistence of correlation and anti-correlation at the same time. One of the central results presented in this work relies on the emergence of dissipation processes during smooth bending of semiconductor nanowires both in the case of classical and quantum picture. Presented results give the base for physical description of electrostatic Q-Swap gate of any topology using open loop nanowires, whose functionality can be programmed. We observe strong localization of wavepacket due to nanowire bending. Therefore it is not always necessary to built barrier between two nanowires to obtain two quantum dot system. On another hand the obtained results can be mapped to problem of electron in curved space, so they can be expressed by programmable position-dependent metric embedded in Schrödinger equation. Indeed semiconductor quantum dot system is capable of mimicking the curved space what provides bridge between fundamental and applied science present in implementation of single-electron devices.

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“…However, it is not applicable in practice for strongly correlated electron problems, since the exact exchange correlation functional is not known. In principle, the electrons in the positionbased charge qubits described in this study are strongly interacting by Coulomb interaction [22]. From this point of view, any single-electron method such as DFT cannot be reliably used.…”

Section: Introductionmentioning

confidence: 99%

Simulation Methodology for Electron Transfer in CMOS Quantum Dots

Sokolov,

Mishagli,

Giounanlis

et al. 2020

Preprint

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The construction of quantum computer simulators requires advanced software which can capture the most significant characteristics of the quantum behavior and quantum states of qubits in such systems. Additionally, one needs to provide valid models for the description of the interface between classical circuitry and quantum core hardware. In this study, we model electron transport in semiconductor qubits based on an advanced CMOS technology. Starting from 3D simulations, we demonstrate an order reduction and the steps necessary to obtain ordinary differential equations on probability amplitudes in a multi-particle system. We compare numerical and semi-analytical techniques concluding this paper by examining two case studies: the electron transfer through multiple quantum dots and the construction of a Hadamard gate simulated using a numerical method to solve the time-dependent Schrödinger equation and the tight-binding formalism for a time-dependent Hamiltonian.

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Paired electron motion in interacting chains of quantum dots

Cited by 12 publications

References 29 publications

Towards the Co-Simulation of Charge Qubits: A Methodology Grounding on an Equivalent Circuit Representation

Towards the Co-Simulation of Charge Qubits: A Methodology Grounding on an Equivalent Circuit Representation

Electrostatically interacting Wannier qubits in curved space

Simulation Methodology for Electron Transfer in CMOS Quantum Dots

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