Packaging and high-temperature characterization of a 650 V, 150 A eGaN HEMT

Lu, Shengchang; Burgos, Rolando; Lu, Gang

doi:10.1088/1361-6641/abdf2a

Cited by 8 publications

(3 citation statements)

References 24 publications

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“…To increase operation temperatures up to the device's physical limitations (175-200 • C), high-temperature packaging should be designed. Examples can be found in the literature; for instance, Lu et al presented a high-temperature packaged GaN High Electron Mobility Transistor (HEMT), which showed sufficient performance operating at 250 • C [64]. In addition, in 2020 Suganuma considered new highly conductive materials for interconnections inside a package to provide optimal thermal resistance at operating temperatures greater than 200 • C [65].…”

Section: Wide-bandgap Semiconductorsmentioning

confidence: 99%

A Thorough Review of Cooling Concepts and Thermal Management Techniques for Automotive WBG Inverters: Topology, Technology and Integration Level

et al. 2021

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The development of electric vehicles (EVs) is an important step towards clean and green cities. An electric powertrain provides power to the vehicle and consists of a charger, a battery, an inverter, and a motor as the main components. Supplied by a battery pack, the automotive inverter manages the power of the motor. EVs require a highly efficient inverter, which satisfies low cost, size, and weight requirements. One approach to meeting these requirements is to use the new wide-bandgap (WBG) semiconductors, which are being widely investigated in the industry as an alternative to silicon switches. WBG devices have superior intrinsic properties, such as high thermal flux, of up to 120 W/cm2 (on average); junction temperature of 175–200 °C; blocking voltage limit of about 6.5 kV; switching frequency about 20-fold higher than that of Si; and up to 73% lower switching losses with a lower conduction voltage drop. This study presents a review of WBG-based inverter cooling systems to investigate trends in cooling techniques and changes associated with the use of WBG devices. The aim is to consider suitable cooling techniques for WBG inverters at different power levels.

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Section: Wide-bandgap Semiconductorsmentioning

confidence: 99%

A Thorough Review of Cooling Concepts and Thermal Management Techniques for Automotive WBG Inverters: Topology, Technology and Integration Level

et al. 2021

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“…In the last decade, GaN has been regarded as the superior substance for high-frequency and high-power applications over silicon due to its better electron saturation velocity, wider bandgap, and high breakdown voltage [1]. Due to the theoretical limits of Si material, such as the low operating temperature range (junction temperature limit-150 • C) in most devices, silicon devices are not viable in harsh conditions like high temperatures [2].…”

Section: Introductionmentioning

confidence: 99%

Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model

Mann¹,

Sharma²,

Rewari³

et al. 2023

Semicond. Sci. Technol.

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This paper proposes an analytical model for a Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of neutral species such as Biotin, Keratin, ChOx, and Zein. When only one subband is occupied and the AlGaN layer is assumed to have been fully ionized, the Fermi-Dirac statistic and 2D state density are used to produce a self-consistent calculation of the carrier density in the quantum well at the interface.It is done by analyzing the impact of biomolecule concentration by inserting a biomolecule of appropriate dielectric permittivity in the cavity area beneath the gate region. The impact of cavity length has been analyzed on the sensor's performance. The proposed device significantly changes the channel potential, transconductance, drain current, and threshold voltage.Dual gate structures offer superior resistance to short channel effects. Due to enhanced transport characteristics, high carrier mobility, drain current, and a variety of other factors, double gate MOS HEMT outperforms single gate MOS HEMT.The maximaltransconductance,drain on sensitivity, and the maximaldrain currentthat has been attained in this work is 0.017S, 0.22 and 0.129mA, respectively, for biomolecule concentration, Nb=3×10¹².Among all the biomolecules used in this study, Keratin has achieved the maximum shift in threshold voltage and transconductance of 0.4V and 0.016S. The increase in current for Keratin, Biotin, Zein, and ChOx is 0.67%, 78%, 17%, and 42%, respectively, from single to Dual gate AlGaN/GaN MOS-HEMT. SiO2, Al2O3, and HfO2oxides have been compared by filling them in the left side of the cavity. Dual gate AlGaN/GaN MOS-HEMT biosensor presents an opportunity to develop robust, low-cost, specific detection and analysis of neutral biomolecule.The analytical model provides good results for drain current according to the comparison of simulation and analytical model findings.

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“…[1][2][3][4][5][6][7][8] Power devices that use wide bandgap semiconductors can operate at temperatures higher than those of conventional Si power devices, and power devices that operate in an operating environment of 200 °C-250 °C are being developed in the automotive field with benefits such as downsizing of the cooling system. [9][10][11] Furthermore, it is expected to operate in high-temperature environments exceeding 500 °C in aircraft, space-related fields, gas and oil mining/underground exploration, nuclear equipment, etc. 12,13) When mounting power devices, an Sn-Ag-Cu solder is mainly used as a die-bonding material in conventional structures using Si semiconductors.…”

Section: Introductionmentioning

confidence: 99%

High-temperature resistant interconnection using Ni nanoparticles and Al microparticles paste sintered in an atmosphere

Koshiba¹,

Iizuka²,

Tatsumi³

2023

Jpn. J. Appl. Phys.

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Next-generation power devices using wide bandgap semiconductors, such as SiC, are expected to operate at higher temperatures than conventional Si power devices, and their operating temperatures are expected to exceed 250 °C. We developed a novel high-temperature resistant interconnection technology for die-bonding of SiC power devices using Ni nanoparticles and Al microparticles composite paste. The bond strength of the Al-metallized Si chip to Ni- metallized direct bonded copper substrate was evaluated using shear tests. The initial shear strength of samples from pressureless sintering at 350 °C for 15 min in the air exceeded 30 MPa. Furthermore, no significant degradation was observed in a high-temperature storage test at 250 °C for 1000 h.

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Packaging and high-temperature characterization of a 650 V, 150 A eGaN HEMT

Cited by 8 publications

References 24 publications

A Thorough Review of Cooling Concepts and Thermal Management Techniques for Automotive WBG Inverters: Topology, Technology and Integration Level

A Thorough Review of Cooling Concepts and Thermal Management Techniques for Automotive WBG Inverters: Topology, Technology and Integration Level

Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model

High-temperature resistant interconnection using Ni nanoparticles and Al microparticles paste sintered in an atmosphere

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