Packaged, integrated DBF/EA-MOD for repeaterless transmission of 10 Gbit/s over 107 km standard fibre

Kuindersma, P.I.; Mols, P.P.G.; Hofstad, G.L.A.v.d.; Cuypers, G.P.J.M.; Tomesen, M.T.; Dongen, T. van; Binsma, J.J.M.

doi:10.1049/el:19931249

Cited by 29 publications

(3 citation statements)

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“…To integrate photonic elements by optical circuits, spatial control of the optical and electrical properties of the underlying materials is required. There are many approaches, such as hybrid integration (Mitze et al 2006), selective regrowth (Delprat et al 1997), selective area epitaxy (Kuindersma et al 1993), and post-growth modification of the optical properties of quantum wells know as quantum well intermixing (Marsh 1993). However, selective area epitaxy as well as etching and regrowth techniques involve repeated use of expensive epitaxial growth systems whose throughput is limited, thus reducing the prospects of low-cost volume production of PICs.…”

Section: Introductionmentioning

confidence: 99%

Quantum well intermixed waveguide grating

Sonkar

Das

2011

Opt Quant Electron

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A waveguide grating have been designed suitable for Coarse Wavelength Division Multiplexing applications in which the refractive index is perturbed by the spatial tailoring of the band gap with fluorine ion implanted quantum well intermixing of the In 0.95 Ga 0.05 As 0.10 P 0.90 /InP multi quantum well structure. The gratings have been modeled using coupled mode theory and diffusion equations and Schrödinger wave equations are used to model quantum well energy while interdiffusion. A four channel waveguide grating from 1,550 to 1,610 nm at a span of 20 nm have been simulated with a channel bandwidth of 13 nm and a cross talk of −5 to −10 dB.

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Section: Introductionmentioning

confidence: 99%

Quantum well intermixed waveguide grating

Sonkar

Das

2011

Opt Quant Electron

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“…However, it has been well known that the EMLs frequency chirp increases with increasing EAM optical output power because of the hole-pileup effect [1] in quantum-well (QW) absorption layer of the EAM. Previous reports of 10-Gb/s over 80-km Manuscript EMLs [2]- [5] have not specified the optical output power, and there has been no report of high-power and low-chirp EML for 10-Gb/s 80-km transmission.…”

Section: Introductionmentioning

confidence: 93%

“…The two-dimensional photocarrier density is expressed as (2) where , and are the photocurrent density, the total carrier lifetime in QW, and the electron charge, respectively. The photocurrent density and thus increase proportionally to the EAM optical output power.…”

Section: Hole Lifetime In a Shallow Qw Eammentioning

confidence: 99%

High-Power Ultralow-Chirp 10-Gb/s Electroabsorption Modulator Integrated Laser With Ultrashort Photocarrier Lifetime

Miyazaki

Yamatoya

Matsumoto

et al. 2006

IEEE J. Quantum Electron.

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A high-power, ultralow-chirp electroabsorption modulator (EAM) integrated with a distributed-feedback laser diode (EML) having ultrashort lifetime of photogenerated holes in the EAM quantum-well (QW) structure is reported for the first time. A shallow QW structure having a small valence band offset to enhance the sweepout of photogenerated holes was employed as EAM absorption layer. The measured hole lifetimes were 7-11 ps, and the measured frequency chirp ( -parameter) was low or negative at low EAM reverse bias voltages even under high optical output power conditions. Successful 10-Gb/s 80-km normal-dispersion single-mode fiber transmission (chromatic dispersion = 1600 ps/nm) and the record average fiber optical output power ( ) of +5 3 dBm were achieved at 25 C. In addition, semicooled operation of EML at enhanced bit rates has been demonstrated for application in small-form-factor protocol-agnostic optical transceivers. A 10.7-Gb/s 1600-ps/nm transmission was achieved at 45 C and = +3 0 dBm.

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