P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

Saji, K. J.; Subbaiah, Y.P. Venkata; Tian, Kun; Tiwari, Ashutosh

doi:10.1016/j.tsf.2015.09.026

Cited by 85 publications

(36 citation statements)

References 84 publications

(91 reference statements)

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“…Adsorption of foreign atoms is another effective and promising strategy for tuning the electronic and magnetic properties of 2D materials 23 30 . Considering that the scientific investigations on the properties of SnO has just started 14 15 16 18 19 31 32 33 34 , the role of extrinsic point-defects and the effects of adatoms on SnO need to be explored to widen the range of its applications.…”

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confidence: 99%

Tailoring the electronic and magnetic properties of monolayer SnO by B, C, N, O and F adatoms

Tao

Guan

2017

Sci Rep

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Recently, SnO has attracted more and more attention, because it is a bipolar electronic material holding great potential in the design of p-n junction. In this paper, we examine the effect of extrinsic point defects on modifying the electronic and magnetic properties of SnO using density functionals theory (DFT). The surface adatoms considered are B, C, N, O and F with a [He] core electronic configuration. All adatoms are found energetically stable. B, C, N and F adatoms will modify the band gap and introduce band gap states. In addition, our calculations show that N, B and F can introduce stable local magnetic moment to the lattice. Our results, therefore, offer a possible route to tailor the electronic and magnetic properties of SnO by surface functionalization, which will be helpful to experimentalists in improving the performance of SnO-based electronic devices and opening new avenue for its spintronics applications.

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confidence: 99%

Tailoring the electronic and magnetic properties of monolayer SnO by B, C, N, O and F adatoms

Tao

Guan

2017

Sci Rep

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“…First, a 50 nm thick HfO 2 was prepared by physical vapor deposition as gate dielectric, followed by 400 °C post deposition annealing (PDA) to initiate the dielectric activation. Subsequently, an 8 nm thick SnO was formed by dc sputtering as the active channel layer, followed by 200 °C PDA. Finally, 50 nm thick Ni metals were evaporated and patterned as source and drain contact electrodes.…”

Section: Methodsmentioning

confidence: 99%

“…Due to the hole transport restricted in oxide semiconductor, only a few oxides exhibit p‐type conduction, which results in the difficulties for p‐type thin film transistors (TFTs). Recently, tin‐oxide (SnO) based semiconductor materials with high intrinsic mobility show high promise for high‐driven current and have been demonstrated to be an appreciate p‐type semiconductor in the p‐type TFTs for display application . Besides, these SnO‐based semiconductor materials have also attracted much attention and been widely used in gas sensors for sensing toxic and explosive gases in air especially .…”

Section: Introductionmentioning

confidence: 99%

P‐type tin‐oxide thin film transistors for blue‐light detection application

Chen

Chiu

Zheng

et al. 2016

Physica Rapid Research Ltrs

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We reported the characteristics of p‐type tin‐oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p‐type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue‐light with a high light/dark read current ratio (Ilight/Idark) of 8.2 × 103 at a very low driven voltage of <3 V. Since sensing of blue‐light radiation is very critical to our eyes, the proposed p‐type SnO TFTs with high sensitivity toward the blue‐light show great potential for future blue‐light detection applications.

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“…Because of the interest in materials with high optical transparency and electrical conductivity, a wide variety of n‐type semiconductor for high‐performance devices have been studied. However, one of the main challenges in transparent electronics is to obtain p‐type semiconductors for the development of low‐power high‐performance complementary devices . Among the most cited transparent p‐type oxides reported in the literature are Cu 2 O, NiO,, and SnO .…”

Section: Introductionmentioning

confidence: 99%

Electrical, optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnN_x thin films

Garzón-Fontecha

Cruz

Quevedo

2017

Surface & Interface Analysis

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We present a study of electrical and optical properties of nitrogen-doped tin oxide thin films deposited on glass by the DC Magnetron Sputtering method. The deposition conditions to obtain p-type thin films were a relative partial pressure between 7% and 11% (N 2 and/or O 2 ), a total working pressure of 1.8 mTorr and a plasma power of 30 W. The deposited thin films were oxidized after annealing at 250°C for 30 minutes. X-ray diffraction results showed that the asdeposited thin films exhibit a Sn tetragonal structure, and after annealing, they showed SnO tetragonal structure. X-ray photoelectron spectroscopy results showed the presence of nitrogen in the samples before and after annealing. The measured physical parameters of the thin films were optical band gap between 1.92 and 2.68 eV, resistivity between 0.52 and 5.46 Ωcm, a concentration of p-type carriers between 10 18 and 10 19 cm −3 , and a Hall mobility between 0.1 and 1.94 cm 2 V −1 s −1 . These thin films were used to fabricate p-type thin film transistors. the thin film crystalline phase, in contrast with larger ionic sizes which could modify this crystalline phase. The focus of this work is to synthesize and characterize p-type N-doped SnO thin films with tetragonal structure using the DC sputtering method. The resulting samples showed different electronic, electrical, and optical properties due to the nitrogen content, and they were used as transparent p-type semiconductors in the fabrication of TFTs. | EXPERIMENTAL DETAILSSnN x , SnO, and SnO x N y thin films were deposited on substrates of Corning 2948 glass (cleaned ultrasonically) by DC reactive magnetron sputtering using a tin target (purity of 99.99%). The deposition parameters used to grow the thin films were a working pressure of 1.8 mTorr, a plasma DC power of 30 W, and relative partial pressure of the reactive gas (RG pp ) between 6% and 17%. The relative partial pressure was calculated from the nitrogen (pN 2 ), oxygen (pO 2 ), and argon (pAr) partial pressures obtained from a residual gas analyzer and using the relation RG pp = (pN 2 + pO 2 )/(pAr + pN 2 + pO 2 ). The as-deposited thin films were oxidized by annealing in a tubular furnace at 250°C for 30 minutes under a continuous gas flow (90% of N 2 and 10% of O 2 ). Depending on the reactive gas, the thin films obtained after annealing were called SnO for oxygen (RG pp = O pp ), SnO:N for nitrogen (RG pp = N pp ), or SnN x O y for oxygen plus nitrogen (RG pp = N pp + O pp ). The crystalline structures of the samples were recorded by X-ray diffraction using a Rigaku Ultima III diffractometer operated at 45 kV and 40 mA with a Cu Kα = 1.5406 Å radiation source. The chemical states and presence of nitrogen in the films were determined by Xray photoelectron spectroscopy (XPS), using a VersaProbe II from PHI with a monochromatic Al Kα (1486.6 eV) radiation source. The charge effects in the XPS spectra were corrected using the value of the binding energy of carbon 1 second peak at 284.5 eV. The surface morphology of films was studied by an at...

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P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

Cited by 85 publications

References 84 publications

Tailoring the electronic and magnetic properties of monolayer SnO by B, C, N, O and F adatoms

Tailoring the electronic and magnetic properties of monolayer SnO by B, C, N, O and F adatoms

P‐type tin‐oxide thin film transistors for blue‐light detection application

Electrical, optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnN_x thin films

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P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

Cited by 85 publications

References 84 publications

Tailoring the electronic and magnetic properties of monolayer SnO by B, C, N, O and F adatoms

Tailoring the electronic and magnetic properties of monolayer SnO by B, C, N, O and F adatoms

P‐type tin‐oxide thin film transistors for blue‐light detection application

Electrical, optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnNx thin films

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Electrical, optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnN_x thin films