P-Type Indium-Doped Passivated Emitter Rear Solar Cells (PERC) on Czochralski Silicon Without Light-Induced Degradation

Cho, Eunhwan; Ok, Young-Woo; Upadhyaya, Ajay; Binns, M.J.; Appel, Jesse; Guo, J.; Rohatgi, A.

doi:10.1109/jphotov.2016.2547578

Cited by 15 publications

(14 citation statements)

References 25 publications

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“…Photovoltaic devices generally require lower levels of indium doping than infrared detectors, and recent work has shown that 200 mm diameter indium doped silicon wafers with PV‐relevant doping levels can be grown on an industrial scale . Passivated emitter and rear cells (PERC) made from indium doped silicon substrates have an efficiency of >20% even after exposure to light levels which would result in substantial LID in boron doped cells . It is also noted that indium's relative scarcity is unlikely to limit the commercial deployment of indium doped silicon.…”

Section: Introductionmentioning

confidence: 99%

“…By analysing the injection dependence of the lifetime, we extract the relevant defect parameters and hence enable general parameterization of lifetime in indium doped silicon. As there are apparent conflicts in the literature regarding whether indium doped silicon itself experiences LID, we perform LID experiments. We compare the final lifetimes to those expected for boron doped silicon with equivalent doping and oxygen concentrations after complete boron‐oxygen LID to assess the viability of indium doped silicon in PV applications.…”

Section: Introductionmentioning

confidence: 99%

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Minority carrier lifetime in indium doped silicon for photovoltaics

Murphy

Pointon

Grant

et al. 2019

Progress in Photovoltaics

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For photovoltaics, switching the p‐type dopant in silicon wafers from boron to indium may be advantageous as boron plays an important role in the light‐induced degradation mechanism. With the continuous Czochralski crystal growth process it is now possible to produce indium doped silicon substrates with the required doping levels for solar cells. This study aims to understand factors controlling the minority carrier lifetime in such substrates with a view to enabling the quantification of the possible benefits of indium doped material. Experiments are performed using temperature‐dependent Hall effect and injection‐dependent carrier lifetime measurements. The recombination rate is found to vary linearly with the concentration of un‐ionized indium which exists in the sample at room temperature due to indium's relatively deep acceptor level at 0.15 eV from the valence band. Lifetime in indium doped silicon is also shown to degrade rapidly under illumination, but to a level substantially higher than in equivalent boron doped silicon samples. A window of opportunity exists in which the minority carrier lifetime in degraded indium doped silicon is higher than the equivalent boron doped silicon, indicating it may be suitable as the base material for front contact photovoltaic cells.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Minority carrier lifetime in indium doped silicon for photovoltaics

Murphy

Pointon

Grant

et al. 2019

Progress in Photovoltaics

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“…The In dopant is chosen to avoid lifetime degradation during light soaking. Though In and Ga are both viable alternatives to B‐dopants, the higher melting point of In (156 °C) can allow for improved doping uniformity in continuous Cz growth compared to Ga . Very few reports are available on the solar cell performance of In‐doped wafers and their LID response .…”

Section: Introductionmentioning

confidence: 99%

“…Though In and Ga are both viable alternatives to B‐dopants, the higher melting point of In (156 °C) can allow for improved doping uniformity in continuous Cz growth compared to Ga . Very few reports are available on the solar cell performance of In‐doped wafers and their LID response . Cho et al demonstrated 20.3% efficient PERC devices with no LID on Cz‐grown In‐doped wafers …”

Section: Introductionmentioning

confidence: 99%

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Impact of Light Soaking on p‐Type Boron‐ and Indium‐Doped Passivated Emitter and Rear Solar Cells on Czochralski‐Grown Silicon

et al. 2019

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Solar cells fabricated on boron‐doped Czochralski‐grown silicon (Cz‐Si) wafers are known to suffer from light‐induced degradation (LID). In this work, the effect of light soaking on passivated emitter and rear (PERC) solar cells fabricated on both indium (In)‐doped Cz‐Si and boron (B)‐doped Cz‐Si wafers are investigated. Efficiencies up to 20.7% and 21.2% are obtained on In‐doped and B‐doped Si wafers, respectively. Though the initial conversion efficiency is lower with In‐doped Si wafers, these cells show no LID after light soaking (1.0 Sun illumination at 25 °C for 85 h). In contrast, cell efficiencies dropped significantly for B‐doped Si wafers, by 0.8%.

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Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps

Guzman

Markevich

Hawkins

et al. 2021

Physica Status Solidi (a)

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Indium‐doped silicon is considered a possible p‐type material for solar cells to avoid light‐induced degradation (LID), which occurs in cells made from boron‐doped Czochralski (Cz) silicon. Herein, the defect reactions associated with indium‐related LID are examined and a deep donor is detected, which is attributed to a negative‐U defect believed to be InsO2. In the presence of minority carriers or above bandgap light, the deep donor transforms to a shallow acceptor. An analogous transformation in boron‐doped material is related to the BsO2 defect that is a precursor of the center responsible for BO LID. The electronic properties of InsO2 are determined and compared to those of the BsO2 defect. Structures of the BsO2 and InsO2 defects in different charges states are found using first‐principles modeling. The results of the modeling can explain both the similarities and the differences between the BsO2 and InsO2 properties.

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P-Type Indium-Doped Passivated Emitter Rear Solar Cells (PERC) on Czochralski Silicon Without Light-Induced Degradation

Cited by 15 publications

References 25 publications

Minority carrier lifetime in indium doped silicon for photovoltaics

Minority carrier lifetime in indium doped silicon for photovoltaics

Impact of Light Soaking on p‐Type Boron‐ and Indium‐Doped Passivated Emitter and Rear Solar Cells on Czochralski‐Grown Silicon

Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps

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