P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE

Usikov, A.; Kovalenkov, O. V.; Ivantsov, V.; Sukhoveev, Vitali; Dmitriev, V.; Shmidt, N. M.; Полоскин, Д.С.; Petrov, V. N.; Ратников, В. В.

doi:10.1557/proc-831-e8.28

Cited by 7 publications

(5 citation statements)

References 8 publications

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“…The above experimental results showed that p-type GaN/sapphire templates are the promising substrates [5] for novel LED structures with upside down p-n junction. There may be some benefits to the p-side down structure involving polarization charge that will be discussed in more detail in a separate publication.…”

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confidence: 68%

“…Recently, substantial progress has been achieved to develop HVPE technology for highly doped p-type GaN and AlGaN materials [5], fabricate AlGaN/GaN quantum well structures by low growth rate HVPE [6], and grow high quality InN epitaxial layers [7]. All-HVPE In-free ultra violet (UV) and violet light emitting diodes have been fabricated [8,9] and are in production.…”

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confidence: 99%

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First all‐HVPE grown InGaN/InGaN MQW LED structures for 460‐510 nm

Syrkin¹,

Ivantsov²,

Kovalenkov³

et al. 2008

Phys. Status Solidi (c)

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In this paper we report on first InGaN‐based light emitting structures grown by hydride vapour phase epitaxy (HVPE). InGaN layers and multi layer InGaN/InGaN epitaxial structures were grown on GaN/sapphire template substrates and characterized. InN content in the InGaN layers was varied from 5 to 35 mol.%. Thickness of InGaN layers was controlled from 10 nm to 2 microns. Density of treading dislocations in the InGaN layers was estimated to be in the 109 cm–2 range. X‐ray diffraction measurements and transmission electron microscopy data confirmed a formation of InGaN/InGaN superlattice structures. Light emitting diode epitaxial wafers were fabricated by HVPE deposition of n‐type InGaN layers and multi layer structures on p‐type GaN template substrates. Depending on InN content in the InGaN light emitting regions, peak electroluminescence wavelength varied from 450 to 510 nm. Results of material characterization are reported. Advantages of the proposed upside down LED configuration and future applications of HVPE to grow InGaN layers and structures are discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 68%

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confidence: 99%

First all‐HVPE grown InGaN/InGaN MQW LED structures for 460‐510 nm

Syrkin¹,

Ivantsov²,

Kovalenkov³

et al. 2008

Phys. Status Solidi (c)

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“…To date, considerable effort has been expended to obtain a high hole carrier concentration. [3][4][5][6][7] Recently, we found that the activation energy of the acceptor level and the carrier concentration of the hole can be controlled by choosing a certain growth condition. In particular, if the source gases are fed in a pulse mode into a metalorganic chemical vapor deposition (MOCVD) reactor, the activation energy of the acceptor level can be drastically decreased, resulting in an increase in carrier concentration.…”

Section: Formation Of Algan and Gan Epitaxial Layer With High P-carrimentioning

confidence: 99%

Formation of AlGaN and GaN epitaxial layer with high p-carrier concentration by pulse supply of source gases

Aoyagi

Takeuchi

Iwai³

et al. 2012

AIP Advances

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“…The latter was reported to ensure the highest intentional free carrier concentration of 8 Â 10 18 cm À3 [6]. The p-type doping in HVPE GaN growth can be achieved by using Zn [7], Cd [8], Be [9], or Mg [10], [11]. Today Mg doping, shown to be relatively more efficient, is mostly used by adding pure metal or powder Mg in a separate boat or mixed with Ga metal and exposed to the HCl.…”

Section: A Hydride Vapor Phase Epitaxymentioning

confidence: 99%

GaN Substrates for III-Nitride Devices

2010

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| Despite the rapid commercialization of III-nitride semiconductor devices for applications in visible and ultraviolet optoelectronics and in high-power and high-frequency electronics, their full potential is limited by two primary obstacles: i) a high defect density and biaxial strain due to the heteroepitaxial growth on foreign substrates, which result in lower performance and shortened device lifetime, and ii) a strong built-in electric field due to spontaneous and piezoelectric polarization in the wurtzite structures along the well-established [0001] growth direction for nitrides. Recent advances in the research, development, and commercial production of native GaN substrates with low defect density and high structural and optical quality have opened opportunities to overcome both of these obstacles and have led to significant progress in the development of several optoelectronic and high-power devices. In this paper, the recent achievements in bulk GaN growth development using different approaches are reviewed; comparison of the bulk materials grown in different directions is made; and the current achievements in device performance utilizing native GaN substrate material are summarized.

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P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE

Cited by 7 publications

References 8 publications

First all‐HVPE grown InGaN/InGaN MQW LED structures for 460‐510 nm

First all‐HVPE grown InGaN/InGaN MQW LED structures for 460‐510 nm

Formation of AlGaN and GaN epitaxial layer with high p-carrier concentration by pulse supply of source gases

GaN Substrates for III-Nitride Devices

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