p-Type GaAs doped by diiodomethane (CI2H2) in molecular beam epitaxy, metalorganic molecular beam epitaxy, and chemical beam epitaxy

Li, N.Y.; Dong, H.K.; Tu, C. W.; Geva, M.

doi:10.1016/0022-0248(95)80215-x

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1995

2008

Publication Types

Select...

Article6

Relationship

Self Cite0

Independent6

Authors

Journals

Cited by 8 publications

(1 citation statement)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1][2][3][4] p-type ␦-doped GaAs quantum wells can be made with Be, Si-acceptor, and C layers. [5][6][7][8] They are suitable systems for the study of the physics at extremely high carrier densities, and for potential technological applications (␦-FET, 2,9,10 ALD-FET, 11 etc.͒.…”

Section: Introductionmentioning

confidence: 99%

Thomas-Fermi approximation inp-type δ-doped quantum wells of GaAs and Si

Gaggero‐Sager¹,

Contreras-Solorio²

1998

Phys. Rev. B

View full text Add to dashboard Cite

Thomas-Fermi calculations of the hole subband structure in p-type ␦-doped Si and GaAs quantum wells are carried out for different values of impurity concentration. Results are compared with previous self-consistent calculations and with some experimental reports, and very good agreement is found. In particular, the result of hole ground level from this model is exactly equal to the value reported for the experimental system with the smallest impurity spreading that has been achieved. ͓S0163-1829͑98͒04507-X͔

show abstract